
HMC788LP2ETR RF/IF and RFID |
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Allicdata Part #: | 1127-1070-1-ND |
Manufacturer Part#: |
HMC788LP2ETR |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC GAIN BLOCK AMP 6DFN |
More Detail: | RF Amplifier IC General Purpose 0Hz ~ 10GHz 6-DFN ... |
DataSheet: | ![]() |
Quantity: | 2 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Frequency: | 0Hz ~ 10GHz |
P1dB: | 20dBm |
Gain: | 12dB |
Noise Figure: | 9dB |
RF Type: | General Purpose |
Voltage - Supply: | 5V |
Current - Supply: | 76mA |
Test Frequency: | -- |
Package / Case: | 6-VDFN Exposed Pad |
Supplier Device Package: | 6-DFN (2x2) |
Base Part Number: | HMC788 |
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RF amplifiers are commonly used components in electronic designs that involve radio frequency signals, such as wireless communication, radar, instrumentation and similar. HMC788LP2ETR is a high performance wideband amplifier made by Skyworks® Solutions, Inc. This miniature amplifier features excellent thermal performance, low noise figure, and high power added efficiency. In this article, we will focus on its application field and working principle.
Application
The HMC788LP2ETR is an ideal amplifier for applications such as cellular base station systems, point-to-point microwave systems, telecom infrastructure, VSAT, CATV, wireless communication systems and more. The amplifier has a wide frequency range from DC to 8 GHz, making it suitable for many different applications. The device’s wideband gain and linearity make it suitable for either input or output stages.The amplifier has an excellent gain of 16dB. It can also achieve high power added efficiency, with a maximum of 35% at 28V, at the 3.7 GHz frequency. This makes it suitable for applications that require low power consumption. The amplifier also features an IP3 of 25.5 dBm and a low noise figure of 1.2 dB at 3.7GHz.
Working Principle
The HMC788LP2ETR is an LNA (low-noise amplifier) with an integrated PIN diode switch. The PIN diode switch allows for the selection of either an input or output signal.The power amplifier is composed of a cascaded amplifier design, which features two identical amplifiers in a push-pull configuration. The first stage is a common-gate-gate amplifier, while the second stage is a common-base amplifier. This allows for a wide frequency response and improved linearity.The PIN diode switch enables the amplifier to be configured to be used in either an attenuator configuration or a bypass configuration. The attenuator configuration is used to suppress the level of the input or output signal, while the bypass configuration is used to pass signals at their original level, reducing distortion.The amplifier is also equipped with a BIAS pin, which can be used to adjust the bias current of the amplifier. This allows for improved power efficiency, as it is possible to optimize the bias current for a given application.
Conclusion
The HMC788LP2ETR is a versatile and high performance LNA. It is suitable for a variety of applications, such as cellular base stations, telecom infrastructure and VSAT. The amplifier features excellent gain, linearity and power added efficiency. The integrated PIN diode switch also allows for the selection of either an input or output signal. The BIAS pin enables optimization of the bias current for improved power efficiency.
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