HMC815ALC5TR-R5

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The HMC815ALC5TR-R5 is a member of Avago\'s family of RF Misc ICs and Modules. The device is a monolithic GaAs power doubler amplifier that operates from 2.7 to 5.2 GHz and is housed in a 5x5 mm QFN-24 package.

The amplifier is designed to increase power efficiency while producing a wide dynamic range. The HMC815ALC5TR-R5 utilizes wideband inductive shunt feedback paths, which are responsible for its enhanced power performance. This device is able to provide 0.5 dBm of saturated output power in the lower frequency range of 2.7-3.5GHz, and produces 6.5 dBm of saturated output power in the upper frequency range of 3.7 to 5.2GHz.

The wideband performance of the HMC815ALC5TR-R5 makes it suitable for a variety of high frequency applications, including 802.11ac/n/a, WLAN, WiMax, and other wireless communication systems. The excellent power gain and output power of this amplifier makes it an ideal choice for mobile and other outdoor applications requiring a high level of performance.

In order to utilize the performance of the HMC815ALC5TR-R5, it is important to understand the device\'s working principle. The device consists of two stages: an input stage, and an output stage. The input stage of the amplifier consists of a pair of GaAs Field Effect Transistors (FETs) connected in shunt feedback topology. The output stage is a two-stage amplifier consisting of two cascaded FETs. The input stage of the amplifier is driven by an external DC power source, while the output stage is driven by a DC voltage derived from the internal rectifier circuit.

The power gain of the amplifier is primarily determined by the FETs used in the input stage. These transistors are designed to provide symmetrical power gain across the entire frequency range of operation. The use of a wideband FET in the input stage also ensures that the signal remains clean and free of distortion even when the operating frequency is changed.

The HMC815ALC5TR-R5 provides a good balance between linearity and power consumption. It is capable of providing high input and output power levels, while still maintaining a low quiescent power of only +/- 10mA. This makes the device ideal for applications that require a low quiescent power and high efficiency. The device also offers high gain as well as low noise figure, which makes it an excellent choice for high-gain applications.

In addition to its excellent performance, the HMC815ALC5TR-R5 also offers a wide range of features such as temperature compensation, glitch prevention, low input-current tracking, and universal input support. These features are designed to ensure superior performance in a variety of operating conditions and are essential for many applications. The device also offers an integrated shutdown pin for controlling the amplifier\'s power supply.

The HMC815ALC5TR-R5 is an ideal choice for a variety of RF Misc ICs and Modules applications. The device offers excellent power efficiency, high gain, and low noise figure in a small package. It is suitable for applications such as 802.11ac/n/a, WLAN, WiMax, and other wireless communication systems where high power efficiency and output power is required. Additionally, the device also offers temperature compensation, glitch prevention, and low input-current tracking to ensure superior performance in different operating conditions.

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