HMC817LP4E

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The Agilent Technologies HMC817LP4E is a high performance, ultra miniaturized amplifier module designed primarily for use in RF communications systems requiring ultra-low noise and high gain, such as cellular phones, base stations, and satellite systems. This article provides an overview of the application field and working principles of the HMC817LP4E.

The HMC817LP4E is a high performance RF amplifier module with low noise, high gain and multiple selection of bias resistors. Its input/output network has a 50 ohm SMA connector, which utilizes a low noise MMIC core. The module also has +5V NMOS bias and +6V, +12V and –4V resistors enabling wide output powers. With an operating frequency range of 0.7-2.6 GHz and up to 14 dB of gain, the amplifier features high linearity. The module also has a wide operating temperature range of –40 to 85 °C and a power consumption of only 375 mW. The package size of the HMC817LP4E is a mere 2.6mm x 1.25mm x 0.78mm making it extremely small and ideal for use in space-constrained RF applications.

The HMC817LP4E is most commonly used in radio frequency (RF) communications systems, such as cellular phones, satellite systems, and base stations. These systems require ultra-low noise and high gain. The amplifier is also suitable for wideband signal detection applications, such as audio, infrared and microwave signal detection. Another application of the HMC817LP4E is for transceiver applications in telecommunication systems, such as personal communications services (PCS) and cellular systems. The module is also suitable for applications involving high frequency signal detection and wideband signal amplification.

The working principle of the HMC817LP4E is based on amplifying an input RF signal with a transistor. It is a low noise amplifier consisting of an MMIC core, a 50 ohm SMA connector and two outputs. The transistor operates as a variable gain amplifier or low-noise amplifier (LNA). The gain is proportional to the bias resistance of the transistor. The input signal is applied to the MMIC core, which converts the signal to a lower frequency, amplifies the signal and then feeds it back to the RF input. The amplified signal is then sent out through the output connector.

The unique features and capabilities of the HMC817LP4E provide numerous benefits to applications requiring a high performance RF amplifier module. Its highly linear, low noise characteristics make it ideal for use in cellular phones, base stations, satellite systems and other RF communications systems. Its ultra miniaturized design and wide operating temperature range give it a distinct advantage in space-constrained applications. Moreover, the module\'s multiple selection of bias resistors provides flexibility in setting output power.

In conclusion, the HMC817LP4E is a high performance RF amplifier module with wide application field and working principles. Its ultra miniaturized size, wide operating temperature range and multiple selection of bias resistors enable it to provide reliable performance in a wide range of RF applications.

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