HMC995LP5GETR

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RF Amplifiers are widely used in a variety of applications due to their ability to increase the power of a signal. The HMC995LP5GETR is a gallium arsenide monolithic microwave integrated circuit (GaAs MMIC) from Avago Technologies. The amplifier uses a low noise design, allowing it to provide a gain of up to 23 dB with a noise figure of 2.7 dB. It is typically used in cellular phone applications such as analog and digital cellular base stations and Digital Defined Radio receivers. Beyond its use in wireless communications, the HMC995LP5GETR can also be used as a low noise amplifier in biomedical imaging equipment, medical diagnostic equipment, instrumentation, and other radio frequency (RF) circuitry.

The HMC995LP5GETR provides a high level of performance in a wide range of applications. The amplifier operates over a frequency range of 950 to 3100 MHz, making it suitable for many communications systems. An integrated 6-bit digital gain control allows for precise adjustment of the gain over a range of 23 dB. The amplifier is housed in a surface mount package and has an operating temperature range of -40 to +85 degrees Celsius.

The working principle of the HMC995LP5GETR is based on a cascaded differential amplifier design. This design approach utilizes two differential stages of amplification to increase the gain and noise figure of the amplifier. The first stage consists of a pair of transistors that are operated in the common-base configuration. In this configuration, each transistor provides a gain of approximately 20 dB, with an associated noise figure of 4 dB. The second stage utilizes a pair of transistors that are operated as a cascode amplifier, providing an additional gain of 3 dB with a noise figure of 2.5 dB. The output of the cascode amplifier is then applied to the output buffer stage, which provides the necessary impedance matching and current drive capability for the output signal.

In order to ensure that the output of the HMC995LP5GETR remains stable under varying load conditions, a built-in thermal compensation circuit is included. This circuit monitors the temperature of the amplifier and adjusts the bias currents of the transistorsto maintain a stable output power over varying temperatures. Additionally, the amplifier includes built in protection features, such as reverse voltage protection, to protect against damage to the device in the event of an over-voltage.

The HMC995LP5GETR is an optimal choice for applications where high linearity, low noise, and wide frequency range are key. Its ability to provide a gain of up to 23 dB in a surface mount package and its low temperature design makes it a suitable amplifier in a wide range of applications including cellular phone base stations, biomedical imaging, and instrumentation.

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