IPA65R660CFDXKSA1 Allicdata Electronics

IPA65R660CFDXKSA1 Discrete Semiconductor Products

Allicdata Part #:

IPA65R660CFDXKSA1-ND

Manufacturer Part#:

IPA65R660CFDXKSA1

Price: $ 0.75
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 6A TO220
More Detail: N-Channel 650V 6A (Tc) 27.8W (Tc) Through Hole PG-...
DataSheet: IPA65R660CFDXKSA1 datasheetIPA65R660CFDXKSA1 Datasheet/PDF
Quantity: 1000
500 +: $ 0.67590
Stock 1000Can Ship Immediately
$ 0.75
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 27.8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 660 mOhm @ 2.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IP65R660CFDXKSA1, a power transistor device, is part of a family of transistors within the field-effect transistor (FET) family. FETs are transistors that can be used in many different types of applications. In particular, the IP65R660CFDXKSA1 is classified as a single-gate MOSFET, or metal-oxide-semiconductor field-effect transistor, with a substantial breakdown voltage rating.A MOSFET is an electronic device which uses the gate of the transistor to control current flow. The transistor itself acts as a switch, and can be used to control and switch instructions in an integrated circuit (IC). In order to understand how the IP65R660CFDXKSA1 works, it is important to understand the principles of MOSFET technology and the concept of how a MOSFET operates.The IP65R660CFDXKSA1 is a single-gate MOSFET, meaning it has only one gate used to control the current flow. The gate itself acts like a separate switch, and is connected to the source and drain of the transistor itself. When a voltage is applied to the gate, it creates an electric field which is used to control the current flow in the transistor. The current flow is controlled from the gate, and as the voltage at the gate increases, so does the current flow.The IP65R660CFDXKSA1 is also designed for use in high-voltage applications. It has a 650V breakdown voltage rating, meaning it can be used in extremely high voltage environments. It also has a very low on-resistance, which allows for better control of the current flow and leads to greater efficiency and energy savings.The IP65R660CFDXKSA1 is used in a variety of applications. It is commonly used in power converters, power supplies, motor control, and battery management. In motor control applications, the MOSFET is used to control the power delivered to the motor. In battery management applications, the MOSFET is used to control the amount of current passing through the battery to ensure battery life is optimized.In summary, the IP65R660CFDXKSA1 is a single-gate MOSFET with a high breakdown voltage rating and a low on-resistance rating. This makes it ideal for applications where high voltage and efficiency are paramount. It can be used in motor control, power converters, and battery management applications, allowing it to be used in a wide variety of situations where accuracy and efficiency are of particular importance. This makes the IP65R660CFDXKSA1 a valuable asset for any electronics project.

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