IPA60R520E6XKSA1

Vgs(th) (Max) @ Id:	3.5V @ 230µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	PG-TO-220-FP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	29W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	512pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	23.4nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	520 mOhm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8.1A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IPA60R520E6XKSA1 Application Field And Working Principle

Introduction

The International Rectifier\'s IPA60R520E6XKSA1 is a single P-channel metal oxide semiconductor field effect transistor (MOSFET) designed for high current applications. It features an industry-standard TO-220 package, and a design that ensures low resistance, high reliability and excellent power performance. It is suitable for use in industrial, commercial, automotive, and military markets.

Application Field of the IPA60R520E6XKSA1

The IPA60R520E6XKSA1 MOSFET has a wide range of uses in a variety of applications. It can be used as a switch in high frequency power supplies, motor control circuits, motor drive circuits, and battery charging systems. It is also suitable for use in appliances such as washing machines and microwaves, and can be used as a power amplifier.The IPA60R520E6XKSA1 MOSFET is also suitable for use in professional audio equipment, LED lighting systems, HVAC systems, and medical equipment. In addition, it is ideal for use in automotive applications such as fuel injection systems and airbag control systems. It is also used in industrial control circuits such as those found in battery charging systems, motor speed control circuits, and switching regulators.

Working Principle of the IPA60R520E6XKSA1

The IPA60R520E6XKSA1 is a single P-channel MOSFET. It consists of a drain, source and gate terminal, which are separated by a SiO2 layer of oxide. The oxide layer acts as an insulator, preventing current from flowing from the source to the drain until it is broken down by a voltage applied to the gate terminal.When a voltage is applied to the gate terminal, the oxide layer is broken down and a conductive channel is formed, allowing current to flow from the source to the drain. The amount of current that flows is determined by the voltage applied to the gate terminal. The higher the voltage, the greater the amount of current that flows.The IPA60R520E6XKSA1 is designed to handle high current with low resistance. The low resistance ensures that the power it is capable of delivering is maximized. In addition, the high current capability ensures that the device can handle high power load with little risk of damaging the device.

Conclusion

The International Rectifier\'s IPA60R520E6XKSA1 is a single P-channel MOSFET designed for high current applications. Its wide range of uses make it suitable for a variety of applications in industries such as automotive, industrial, commercial, and military. It has low resistance, high reliability, and excellent power performance, making it ideal for applications such as power supplies, motor control circuits, motor drives, and battery charging systems. The MOSFET works by using a voltage applied to the gate terminal to break down the oxide layer, creating a conductive channel that allows current to flow from the source to the drain.

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