IPA60R125C6E8191XKSA1 Allicdata Electronics
Allicdata Part #:

IPA60R125C6E8191XKSA1-ND

Manufacturer Part#:

IPA60R125C6E8191XKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH TO220-3
More Detail:
DataSheet: IPA60R125C6E8191XKSA1 datasheetIPA60R125C6E8191XKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Last Time Buy
Description

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Field effect transistors (FETs) are a class of transistors commonly used in electronics. One type of FET, the Metal Oxide Semiconductor FET (MOSFET), is often referred to as an Insulated Gate FET or IGFET. The particular model in question, the IPA60R125C6E8191XKSA1 MOSFET, is a single transistor, meaning it contains only one transistor in the same package.

The main advantage of FETs is their minimal gate current requirements. Unlike the bipolar junction transistor (BJT), the FET needs only a small current to change the resistance of the gate material, allowing it to easily open and shut with minimal power requirement. This makes them ideal for situations where very low power is needed to control signals. In comparison to BJTs, FETs also have a much faster switching speed and much higher input impedance.

The IPA60R125C6E8191XKSA1 MOSFET is a type of Field Effect Transistor made for use in amplifier circuits. Its application field is the frequency range of 1 MHz to 60 MHz and operates at a power level of 125 watts. With its high input impedance, it is ideal for use in application requiring high frequency signal processing, such as radio receivers and transmitters. This MOSFET can also be used in linear amplifier circuits, switching circuits and some logic applications.

The operating principle of a MOSFET is based on the principle of an electrostatic field. It acts as an electronic switch, using an insulated gate to control the flow of current between the drain and source terminals. When the voltage applied to the gate terminal is increased or decreased, it changes the conductivity between the source and drain. A small input current is all that is required to cause the field effect, allowing MOSFETs to switch rapidly and with a minimum of power.

In summary, the IPA60R125C6E8191XKSA1 MOSFET is a single transistor designed for use in amplifier circuits in the frequency range of 1 MHz to 60 MHz. With its low gate current requirement and high input impedance, it is ideal for radio receivers and transmitters, linear amplifiers, switching circuits, and some logic applications. It operates by using an insulated gate to control the flow of current between the drain and source terminals, using an electrostatic field.

The specific data is subject to PDF, and the above content is for reference

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