IPA60R380C6XKSA1 Allicdata Electronics
Allicdata Part #:

IPA60R380C6XKSA1-ND

Manufacturer Part#:

IPA60R380C6XKSA1

Price: $ 1.55
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 10.6A TO220-FP
More Detail: N-Channel 600V 10.6A (Tc) 31W (Tc) Through Hole PG...
DataSheet: IPA60R380C6XKSA1 datasheetIPA60R380C6XKSA1 Datasheet/PDF
Quantity: 1000
1 +: $ 1.41120
10 +: $ 1.27260
100 +: $ 1.02243
500 +: $ 0.79521
1000 +: $ 0.65889
Stock 1000Can Ship Immediately
$ 1.55
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO-220-FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 31W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IPA60R380C6XKSA1 Application Field and Working Principle

The IPA60R380C6XKSA1 is a type of transistor device known as an N-Channel Enhancement Mode Power MOSFET. It is a Field-Effect Transistor (FET) that utilizes the majority carrier conduction technique to provide a low source current and low on-resistance. This provides a high level of efficiency and low power dissipation associated with the operating voltage.

The IPA60R380C6XKSA1 has many applications that range from high-current switch designs in motor control or switching power supply modules to low-power switching applications in computer systems and communications. Due to its unique characteristics, it has the potential to be used in a wide range of applications ranging from consumer and industrial products to avionics and military systems.

Working Principle

The IPA60R380C6XKSA1 is an N-Channel Enhancement Mode Power MOSFET, which operates in the N-channel when connected to an input voltage source. An input voltage is applied to the gate, which attracts a certain type of charged carriers, known as electrons, to the source. This causes an attractive force to be created between the source and the gate terminals of the device, resulting in channel formation.

The channel created acts as a bridge between the source and the drain of the device, allowing electrons to flow from the source to the drain. The voltage drop across this bridge depends on the current running through the device and is known as Vgs. The device has low on resistance and high current transferring capability, making it suitable for high-current switch designs.

In addition to the high current transferring capabilities, the MOSFET also features a number of other benefits, such as low-power dissipation, higher reliability, low parts count and good temperature stability. As a result, it is often used in the switch designs of critical systems to ensure optimal performance.

Conclusion

In conclusion, the IPA60R380C6XKSA1 is a type of N-Channel Enhancement Mode Power MOSFET that is well suited for numerous applications ranging from high-current switch designs in motor control or switching power supply modules to low-power switching applications in computer systems and communications. It features low on resistance, high current transferring capability, low power dissipation, higher reliability, low parts count and good temperature stability, making it an ideal choice for many designs.

The specific data is subject to PDF, and the above content is for reference

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