IPAN80R280P7XKSA1

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The IPAN80R280P7XKSA1 is one of the first-generation single-chip field effect transistors (FETs) and has become widely used in a variety of applications. Developed by International Rectifier, the transistor offers superior electrical performance and provides an efficient yet cost effective alternative to the costly MOSFETs of the past.

The IPAN80R280P7XKSA1 transistor feature a wide variety of features and functions to provide a match for all types of FET applications. The major features of the IPAN80R280P7XKSA1 include:

• Soft-start circuit to eliminate high in-rush current
• Short-circuit protection
• High operating frequency
• Low gate charge
• Low on-resistance
• Low reverse leakage
• Very low gate-to-source voltage

The IPAN80R280P7XKSA1 also includes a unique p-channel MOSFET design which allows the FET to be used as either a low side or high side switch. This makes it ideal for applications such as motor control, DC/DC converters, and other high power applications.

The working principle of the IPAN80R280P7XKSA1 is simple and straightforward. To begin with, the transistor\'s gate voltage, or VGS, is used to control the conduction between the drain and source terminals. When the gate voltage is high, a potential barrier is created between the gate and the source, preventing current flow. When the gate voltage is low enough the barrier is broken, allowing current to flow. The transistor is said to be in the “active” mode when the current is flowing. This can be seen in the figure below.

The IPAN80R280P7XKSA1 transistor can be used in a variety of applications. These applications include motor control and DC/DC power converters, motor control, and precision current source applications. The transistor is also an ideal choice for high power industrial applications such as variable frequency power supplies, welding, and UPS systems. The transistor can also be used for automotive applications, as well as for DC/DC converters and power supplies.

The IPAN80R280P7XKSA1 is a reliable and cost-effective single-chip FET that offers superior performance and longevity. The transistor\'s unique p-channel MOSFET design allows it to be used as either a low side or high side switch, making it ideal for a variety of applications. It offers excellent performance in terms of current handling capability, low gate charge, low reverse leakage, and low gate-to-source voltage. The transistor also has a wide range of features, including a soft-start circuit, short circuit protection, and a high operating frequency. Its impressive operational characteristics make it an ideal choice for a wide range of applications.

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