IPAN70R750P7SXKSA1

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The IPAN70R750P7SXKSA1 MOSFET transistor is a part of the ON Semiconductor’s OptiMOS range of power MOSFETs. This component is a N-channel MOSFET in an extended package that is specifically designed for hot-swappable applications. It is also suitable for logic-level applications and can also be used for high-voltage DC-DC conversion applications.

The IPAN70R750P7SXKSA1 utilizes ON Semiconductor’s advanced OptiMOS technology which is optimized for advanced power switches. This technology helps by providing superior device performance, improved reliability and higher device yields. The broad product family also contains several channel types as well as different current and voltage ratings that are suited for a variety of applications.

The IPAN70R750P7SXKSA1 is an N-channel MOSFET transistor with an extended drain-source breakdown of 750 V and a continuously drain current of 70 A. This transistor has gate-source voltage of 25 V and gate-drain voltage of 20V. The drain-source resistance of this component at 25 °C is 25 milliohms, while its input capacitance is 2500 pF.

The IPAN70R750P7SXKSA1 can be used in a variety of application fields such as high-voltage DC-DC converters, motor drives, inverter boards, and server/ network provided power supplies. It can also be used in solar, battery and power management applications. Due to its wide range of features, it is an ideal choice for high-power and high-temperature applications as well.

The IPAN70R750P7SXKSA1 MOSFET works in the same way as other MOSFETs. It has three main terminals, gate, source and drain. When a voltage is applied to the gate, electrons flow from the source to the drain. The voltage at the gate will determine the amount of current which can flow through the transistor. This process is known as the formation of a MOSFET channel. The IPAN70R750P7SXKSA1 utilizes this same principle for high-power and high-temperature applications.

The IPAN70R750P7SXKSA1 has several key features which make it especially useful in applications like those listed above. It has an extended drain-source breakdown of 750V and can withstand continuous drain current of up to 70 A. It also has a low threshold voltage and fast switching times. These features make it suitable for high-voltage, high-current applications like those mentioned above. As an added advantage, this component also has good static and dynamic characteristics which help in improving overall efficiency.

In conclusion, the IPAN70R750P7SXKSA1 MOSFET transistor is an ideal choice for high-power and high-temperature applications. It has high reliability, low threshold voltage and fast switching times. Its ability to withstand up to 750V and 70A of continuous drain current make it an excellent choice for high-voltage DC-DC converters, motor drives, inverter boards, server and network provided power supplies, and many other applications. Thanks to the ON Semiconductor’s advanced OptiMOS technology, it provides superior device performance and improved reliability.

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