IPB70N12S311ATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPB70N12S311ATMA1 is a N-channel MOSFET with a 175V drain-source voltage and a drain current of up to 123A. It is a robust transistor that is used in a range of applications, making it a popular choice for many engineering applications.

Application Field

This device is capable of handling high current and voltage loads, with a maximum voltage rating of 175V, and a maximum current rating of 123A. As a result, it is an ideal choice for automotive applications, such as DC motor control and switching. It is also well suited for AC motor control applications, as it can operate in a wide range of temperatures. The device is also used as a power switch in a variety of applications, including amplifier circuits, inverters, power supplies, and power factor correction.

The device is also used in audio applications, such as amplifiers, crossover networks, and preamplifiers, where the device can handle large AC voltages with ease. Additionally, this device is used in the manufacture of robotics, where it can be used as a motor controller as well as a switch. This device is also well suited for use as a high frequency switch, as it has a low on-resistance and a fast switching time.

Working Principle

The IPB70N12S311ATMA1 is an N-channel MOSFET, which uses the flow of electrons from the source to the drain to control the flow of current from the drain to the source. The device operates by applying a small voltage to its gate, which modulates the conductivity between the source and drain. This voltage can be either positive or negative, depending on the application.

When a positive voltage is applied to the gate, electrons move from the source to the drain, creating a channel between the two. This allows electrons to flow from the drain to the source, thus controlling the current from the drain to the source. When the gate voltage is changed, the channel\'s width changes, allowing the device to act as a variable resistor.

In contrast, an N-channel device works inversely to a P-channel MOSFET. When a negative voltage is applied to the gate, a channel is created between the source and drain, allowing electrons to flow from the source to the drain. This inverts the flow of current from the source to the drain, thus allowing the device to be used as a switch.

The IPB70N12S311ATMA1 MOSFET is designed for operation in a range of temperatures and can be used in a variety of applications. Its high current and voltage tolerance, as well as its low on-resistance, make it an ideal choice for many engineering applications.

The specific data is subject to PDF, and the above content is for reference