IPB79CN10N G

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IPB79CN10N G is a high-performance N-channel, enhanced-mode E MOSFET (metal-oxide semiconductor field-effect transistor) that is a cost-effective solution for general purpose, low side switching applications. It has both inductive and non-inductive load driving capabilities, and can handle up to 14.5 A RMS continuous drain current and up to a maximum of 260 A pulsed drain current. This MOSFET can operate at temperatures up to 150°C and has a maximum voltage rating of 30 V.

An E MOSFET is a type of field-effect transistor (FET) that utilizes a metal-oxide-semiconductor as the intermediate layer between two electrodes. It is commonly used in low-level switching and amplifying operations. The E MOSFET device consists of two terminals known as the source and the drain that are connected to two conducting channels. A gate terminal serves as the control voltage. When a voltage is applied to the gate terminal, it causes the electrons to flow through the channel, resulting in current conduction between the source and the drain. The amount of current flow depends on the voltage applied to the gate terminal.

The IPB79CN10N G is a very powerful device for its size and can handle a wide range of loads. Its drain to source breakdown voltage of 12V makes it an ideal solution for high bridge applications, such as motor and servo drives. It has a drain-source on-resistance of 0.0084 Ω(Rdson), which allows more current to flow through the channel with less losses. This makes it ideal for high-efficiency, low-noise circuit designs.

The IPB79CN10N G also boasts an avalanche ruggedness of 100V, meaning that it can withstand high voltage spikes without causing damage to the device or the circuit. This makes it an excellent choice for robust applications, including automotive and industrial applications. The device has a low gate charge of 4 nC, which reduces the load on the gate driver and associated circuitry. This helps reduce component costs and improves system performance.

The IPB79CN10N G is a highly reliable device and can handle extreme temperatures and environmental conditions. The device also has excellent thermal performance, with an R DS(On) of 0.0118°C/W and a maximum power dissipation of 1.15W. This allows the device to operate in a wide range of applications, including automotive, industrial, telecommunication, and power management.

The IPB79CN10N G is an excellent choice for low side switching applications and provides excellent performance, reliability, and cost-effectiveness. It has a maximum current rating of 14.5A RMS and can withstand high voltages and temperatures. The device also boasts an avalanche ruggedness of 100V, low gate charge of 4 nC, and excellent thermal performance. The device provides a reliable solution for most low power applications.

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