IPB77N06S212ATMA1

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IPB77N06S212ATMA1 is a power FET developed by Infineon Technologies. It belongs to an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) family with a low on-state resistance and an optimized gate charge that makes it suitable for use in power converters, motor drives, and high-efficiency dc/dc converters. This paper will examine the field of application of IPB77N06S212ATMA1 and analyze its working principle.

Application field

Due to its small dimensions and low on-state resistance, IPB77N06S212ATMA1 MOSFET can be used in a wide range of applications. In the automotive sector, it can be used in traction inverters, in DC/DC converters, in onboard charger applications, and in ECU/hybrid control applications. It can also be used in solar inverters, UPS systems, computer power supplies, and three-phase motor drives.

IPB77N06S212ATMA1 can operate with a maximum junction temperature of 175°C and can handle drain-source voltage up to 100V. Additionally, its body diode has a low recovery time and low forward voltage, making it suitable for use in synchronous rectifiers. Its spike ruggedness and avalanche energy performance make it suitable for use at high switching frequencies.

Working principle

The working principle of an N-Channel MOSFET consists in controlling a conducting channel (called “channel”) that connects the drain and the source terminal. A voltage applied to the gate terminal (called “gate”) will create an electric field that changes the conductivity of the channel and thus regulates the current flowing between the drain and the source terminals. When a positive voltage is applied to the gate, the channel becomes conductive and a current can flow between the drain and the source. When the gate voltage is turned off, the channel will be turned off and the current flow will stop.

The IPB77N06S212ATMA1 features a low on-state resistance and an optimized gate charge, making it suitable for applications where low resistive losses are desired. Additionally, its fast switching capability allows for high-frequency operation, making it suitable for high-efficiency power conversion.

In summary, IPB77N06S212ATMA1 is a power FET developed by Infineon Technologies and is suitable for a wide range of applications, such as automotive traction inverters, solar inverters, computer power supplies, and motor drives. Its small dimensions and fast switching capability make it suitable for high-frequency operation, while its low on-state resistance and optimized gate charge provide lower resistive losses. Finally, its body diode has a low recovery time and low forward voltage, making it suitable for use in synchronous rectifiers.

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