Allicdata Part #: | IPC90R120C3X1SA1-ND |
Manufacturer Part#: |
IPC90R120C3X1SA1 |
Price: | $ 10.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH BARE DIE |
More Detail: | |
DataSheet: | IPC90R120C3X1SA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 9.12870 |
Series: | * |
Part Status: | Last Time Buy |
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The IPC90R120C3X1SA1 is a vertical terminated power Field Effect Transistor (FET) designed for high current and high speed applications. It is a single level device (common source type) that can be used for switching, linear amplification, voltage regulation, and output protection applications. The device operates in a depletion mode, allowing for improved linearity. The device has been designed for use in high efficiency power supply designs.
The IPC90R120C3X1SA1 is capable of handling up to 1200V while maintaining excellent switching and inductive load characteristics. It features a low on-resistance of 0.90 ohms typical, a turn-on voltage of 6V and an off-state leakage of 400µA. The device has a wide variety of features that make it an excellent choice for many applications, including high efficiency operation and high surge capability.
The IPC90R120C3X1SA1 is capable of efficiently providing power to many kinds of applications in both linear and switching mode. It is particularly well suited for applications requiring high current, such as switch mode power supplies and motor controllers. As the device has lower input capacitance than traditional FET’s,it is also perfect for applications that require improved frequency response. The device also features fast switching speeds and thermal capability, as well as low gate charge, making it ideal for switching or power conversion applications.
The working principle of the IPC90R120C3X1SA1 is quite straightforward. The gate of the FET controls whether current flows through the device. When the gate voltage is below the threshold voltage, the FET operates in depletion mode and the current flowing through the device is limited to whatever is supplied by the gate bias. If the gate voltage surpasses the threshold voltage, the FET starts to act like a resistor, allowing current to flow until the FET is switched off again. This is a convenient way to control and protect circuits as it eliminates the need for a separate current limiting circuit.
In summary, the IPC90R120C3X1SA1 is a high power single level Field Effect Transistor designed for high current and high speed applications. It is capable of efficient operation in both linear and switching mode and has been designed for use in high efficiency power supply designs. The device features low on-resistance, fast switching speeds, thermal capability, and low gate charge, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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