IPC90R1K0C3X1SA1 Allicdata Electronics
Allicdata Part #:

IPC90R1K0C3X1SA1-ND

Manufacturer Part#:

IPC90R1K0C3X1SA1

Price: $ 0.81
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH BARE DIE
More Detail:
DataSheet: IPC90R1K0C3X1SA1 datasheetIPC90R1K0C3X1SA1 Datasheet/PDF
Quantity: 1000
11705 +: $ 0.72622
Stock 1000Can Ship Immediately
$ 0.81
Specifications
Series: *
Part Status: Last Time Buy
Description

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IPC90R1K0C3X1SA1 is a type of insulated gate bipolar transistor (IGBT) which falls under the category of Transistors, FETs and MOSFETs – Single. IPC90R1K0C3X1SA1 has the ability to provide efficient power for the most complicated and demanding applications.

What is unique about the IPC90R1K0C3X1SA1 is its ability to switch frequencies of up to 1.2 GHz and supply up to 80 watts of gate charge. This makes it ideal for applications such as solar inverters, AC motor drives, PWM amplifiers and switching power supplies.

In solar inverters, IPC90R1K0C3X1SA1 provides a reliable and efficient inverter switch, allowing the maximum efficiency in power conversion. Potentiometers can be used to adjust the inverters output current. In AC motor drives, this IGBT provides an effective and efficient switch, allowing for maximum performance and power efficiency.

In PWM amplifiers, this IGBT provides a superior switching rate, allowing for optimal noise reduction and power efficiency. This therefore allows for a deeper modulation depth, resulting in a cleaner, more dynamic music and higher fidelity. In switching power supplies, this IGBT allows for efficient power conversion, allowing for maximum efficiency of power use.

Now let us understand the working principle behind IPC90R1K0C3X1SA1. IPC90R1K0C3X1SA1 operates with a principle called the insulated gate turn off technology. This technology allows the device to switch high currents while consuming less power due to its ability to cut off the current while consuming minimal power.

This is made more efficient by its ability to provide high frequency switching capabilities. A large amount of thermal dissipation occurs which allows for fast turn off, meaning even more power savings. Furthermore, this IGBT has the added benefit of low on-state resistance which helps to reduce power loss. This technology helps to reduce the amount of heat generated on the IGBT, thus improving the overall efficiency of the device.

In addition to its high power efficiency, IPC90R1K0C3X1SA1 also offers low voltage noise thanks to its fast switching rate. This makes it an ideal device for applications where low noise is of utmost importance. Furthermore, due to its low on-state resistance, IPC90R1K0C3X1SA1 also offers excellent surge current protection.

Overall, IPC90R1K0C3X1SA1 is an excellent choice for applications requiring efficient power conversion. Its ability to switch frequencies of up to 1.2 GHz and supply up to 80 watts of gate charge make it ideal for applications such as solar inverters, AC motor drives, PWM amplifiers, and switching power supplies. Furthermore, its insulated gate turn off technology allows for efficient switching, resulting in high power efficiency, low voltage noise and excellent surge current protection.

The specific data is subject to PDF, and the above content is for reference

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