IPC90R1K2C3X1SA1 Allicdata Electronics
Allicdata Part #:

IPC90R1K2C3X1SA1-ND

Manufacturer Part#:

IPC90R1K2C3X1SA1

Price: $ 0.70
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH BARE DIE
More Detail:
DataSheet: IPC90R1K2C3X1SA1 datasheetIPC90R1K2C3X1SA1 Datasheet/PDF
Quantity: 1000
13608 +: $ 0.62688
Stock 1000Can Ship Immediately
$ 0.7
Specifications
Series: *
Part Status: Last Time Buy
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPC90R1K2C3X1SA1 is a single field-effect transistor, more commonly referred to as an FET. It is a type of electronic switch that can be used to turn a circuit on and off. To understand how an FET works, it is important to familiarize oneself with the three terminals of the device: the source, the drain, and the gate. The source and drain terminals are connected to the circuit. When voltage is applied to the gate of the FET, it allows current to flow from the source to the drain. When no voltage is applied to the gate, no current flows and the circuit is "off." FETs are used in many electronics applications, from radio frequency (RF) amplifiers and modulators, to power supplies and digital logic circuitry. In particular, IPC90R1K2C3X1SA1 has been designed primarily for use in RF amplifiers and modulators, as it has a very high input impedance and low voltage drop.

The IPC90R1K2C3X1SA1 is a high-performance, low-power FET that is ideal for use in sensitive circuits. It has a transconductance rating of 6 mho and a low on-resistor of 0.6 ohm. It is designed to operate with a wide range of voltage and current levels, and requires only a small gate-source voltage (Vgs) to open the FET. The FET is also quite robust, with a breakdown voltage rating of 100 volts, making it suitable for use in high-voltage applications.

The high-performance of the IPC90R1K2C3X1SA1 is due to its advanced design. It utilizes planar silicon technology to reduce the device\'s input capacitance, which increases its high-frequency response. Additionally, the design reduces device noise and reduces power consumption. Its dimensions measure 3.9 mm x 2.5 mm, making it small enough to be used in densely-packed electronics designs. The FET is surface-mountable and comes in an 8-pin ceramic package.

Unlike bipolar junction transistors, the FET is a unipolar device. It will not conduct electricity in either direction and can act as a switch to control the flow of current in a circuit. This makes it ideal for use as an amplifier and modulator, as it can be used to precisely control the amount of current being amplified or modulated. Additionally, FETs are much more stable than bipolar junction transistors, meaning that they are less prone to thermal runaway. As a result, it is a much more reliable switch for sensitive circuits.

IPC90R1K2C3X1SA1 is a single FET that is designed for use in many different electronic applications. It is a versatile device that can be used as either a switch or an amplifier or modulator. Its small size, high input impedance, and low on-resistance make it an ideal choice for use in RF applications. It has a long lifespan and requires very little power to operate, making it an efficient and reliable switch for sensitive circuits.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IPC9" Included word is 11
Part Number Manufacturer Price Quantity Description
IPC95R750P7X7SA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH BARE DIE
IPC95R1K2P7X7SA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH BARE DIE
IPC95R450P7X7SA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH BARE DIE
IPC90N04S5L3R3ATMA1 Infineon Tec... -- 10366 MOSFET N-CH 40V 90A 8TDSO...
IPC90N04S53R6ATMA1 Infineon Tec... 0.27 $ 1000 MOSFET N-CH 40V 90A 8TDSO...
IPC90R120C3X1SA1 Infineon Tec... 10.05 $ 1000 MOSFET N-CH BARE DIE
IPC90R1K2C3X1SA1 Infineon Tec... 0.7 $ 1000 MOSFET N-CH BARE DIE
IPC90R1K0C3X1SA1 Infineon Tec... 0.81 $ 1000 MOSFET N-CH BARE DIE
IPC90R800C3X1SA1 Infineon Tec... 0.97 $ 1000 MOSFET N-CH BARE DIE
IPC90R500C3X1SA1 Infineon Tec... 1.48 $ 1000 MOSFET N-CH BARE DIE
IPC90R340C3X1SA1 Infineon Tec... 2.21 $ 1000 MOSFET N-CH BARE DIE
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics