![IPC90R1K2C3X1SA1 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IPC90R1K2C3X1SA1-ND |
Manufacturer Part#: |
IPC90R1K2C3X1SA1 |
Price: | $ 0.70 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH BARE DIE |
More Detail: | |
DataSheet: | ![]() |
Quantity: | 1000 |
13608 +: | $ 0.62688 |
Series: | * |
Part Status: | Last Time Buy |
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The IPC90R1K2C3X1SA1 is a single field-effect transistor, more commonly referred to as an FET. It is a type of electronic switch that can be used to turn a circuit on and off. To understand how an FET works, it is important to familiarize oneself with the three terminals of the device: the source, the drain, and the gate. The source and drain terminals are connected to the circuit. When voltage is applied to the gate of the FET, it allows current to flow from the source to the drain. When no voltage is applied to the gate, no current flows and the circuit is "off." FETs are used in many electronics applications, from radio frequency (RF) amplifiers and modulators, to power supplies and digital logic circuitry. In particular, IPC90R1K2C3X1SA1 has been designed primarily for use in RF amplifiers and modulators, as it has a very high input impedance and low voltage drop.
The IPC90R1K2C3X1SA1 is a high-performance, low-power FET that is ideal for use in sensitive circuits. It has a transconductance rating of 6 mho and a low on-resistor of 0.6 ohm. It is designed to operate with a wide range of voltage and current levels, and requires only a small gate-source voltage (Vgs) to open the FET. The FET is also quite robust, with a breakdown voltage rating of 100 volts, making it suitable for use in high-voltage applications.
The high-performance of the IPC90R1K2C3X1SA1 is due to its advanced design. It utilizes planar silicon technology to reduce the device\'s input capacitance, which increases its high-frequency response. Additionally, the design reduces device noise and reduces power consumption. Its dimensions measure 3.9 mm x 2.5 mm, making it small enough to be used in densely-packed electronics designs. The FET is surface-mountable and comes in an 8-pin ceramic package.
Unlike bipolar junction transistors, the FET is a unipolar device. It will not conduct electricity in either direction and can act as a switch to control the flow of current in a circuit. This makes it ideal for use as an amplifier and modulator, as it can be used to precisely control the amount of current being amplified or modulated. Additionally, FETs are much more stable than bipolar junction transistors, meaning that they are less prone to thermal runaway. As a result, it is a much more reliable switch for sensitive circuits.
IPC90R1K2C3X1SA1 is a single FET that is designed for use in many different electronic applications. It is a versatile device that can be used as either a switch or an amplifier or modulator. Its small size, high input impedance, and low on-resistance make it an ideal choice for use in RF applications. It has a long lifespan and requires very little power to operate, making it an efficient and reliable switch for sensitive circuits.
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