Allicdata Part #: | IPD14N06S280ATMA1TR-ND |
Manufacturer Part#: |
IPD14N06S280ATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 17A TO252-3 |
More Detail: | N-Channel 55V 17A (Tc) 47W (Tc) Surface Mount PG-T... |
DataSheet: | IPD14N06S280ATMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 14µA |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 293pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 47W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IPD14N06S280ATMA1 is a N-channel, Logic Level Field-Effect Transistor (FET). It operates within a wide range of temperatures, from -55°C to 175°C, and has a drain current of 95A with a power dissipation of 47 Watts. This device is RoHS compliant and is an excellent choice for space applications. The IPD14N06S280ATMA1 has a low gate charge and low output capacitance. It also features built-in ESD Drain protection, which helps to improve system reliability.
The IPD14N06S280ATMA1 has a number of popular applications. It is often used in consumer and commercial automotive systems, battery charger circuits, and portable computing. It is ideal for motor control, switching power supplies, and low side switching applications. It is also used in LED lighting systems and power management systems. The device is also popular in industrial and consumer enclosures, used to control power on/off and/or application control.
The IPD14N06S280ATMA1 is designed to switch high currents with low signal voltages. The device is particularly popular in medium power switching applications, such as DC/DC converters, lighting systems, and power supplies. It offers better reliability than other FETs in its class, as well as low signal distortion, low operating temperature rise, low gate charge, and a low on-state resistance.
The working principle of the IPD14N06S280ATMA1 is based on the principles of field-effect transistor switching. This device is a FET with a gate-to-source voltage control. The gate-source voltage, in turn, controls the current flow through the channel. The gate-source voltage can be positive or negative, depending on the configuration of the FET and the desired current flow.
When the gate voltage is positive, it attracts electrons from the source and creates a conductive channel between the source and drain. When the gate voltage is negative, it repels electrons from the source and blocks current flow between the source and drain. The higher the gate-source voltage, the higher the current flow, and the lower the gate-source voltage, the lower the current flow.
The IPD14N06S280ATMA1 is designed to be used in a wide range of applications where the need for high current switching at low signal voltages is present. It offers high-performance switching capabilities, while providing excellent reliability and a low on-state resistance. With its wide range of features, it is an ideal device for a wide variety of medium power switching applications.
The specific data is subject to PDF, and the above content is for reference
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