IPD122N10N3GBTMA1

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IPD122N10N3GBTMA1 is a p-channel enhancement mode insulated gate field effect transistor (IGFET), or a MOSFET, manufactured by Infineon, an international semiconductor company. It is housed in an automated, surface-mount technology (SMT) package with dual collector and source terminals. The device is specifically designed to offer the efficiency, performance, and reliability required for a variety of power switching and digital applications.

The primary application field of IPD122N10N3GBTMA1 is power switching, digital logic switching, switching regulators and amplifiers, as well as automotive and industrial applications. This type of MOSFET is also used as an electronic switch in electronic circuits and systems, where it is used to turn electrical components on and off. It is often preferred over the traditional mechanical switches due to its low power consumption, high-temperature operation, and wide range of voltage ranges. Furthermore, IPD122N10N3GBTMA1’s robust construction and low on-resistance makes it highly reliable and suitable for use in high-power applications.

The primary working principle of an IPD122N10N3GBTMA1 device is based on the operation of an insulated gate field effect transistor (IGFET). A IGFET is a type of transistor which consists of a source, gate, and drain terminal. In operation, a voltage is applied across the gate-source voltage, causing the channel to become conductive and allowing current to flow from the source to the drain. By controlling the applied gate-source voltage, the drain-source current can be regulated, allowing for on-demand electrical current flow.

The IPD122N10N3GBTMA1 is designed for a maximum drain-source voltage of 200V, a maximum drain current of 122A, and a maximum gate voltage of 10V. It also features a maximum power dissipation of 3W, a maximum junction temperature of 175°C, and an on-resistance of 11.2 mΩ in saturation. In addition to these parameters, the IPD122N10N3GBTMA1 device also offers a rugged and reliable construction, with its precision gate oxide, dynamic gate and drain punch-through protection, and its glass passivated drain structure.

IPD122N10N3GBTMA1 offers a high level of performance and reliability that makes it perfect for use in a variety of power switching, digital logic switching, switching regulators, and amplifiers applications. Furthermore, its wide voltage range, low on-resistance, and high-temperature operation make it an ideal choice for high-power applications.

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