IPD170N04NGBTMA1

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IPD170N04NGBTMA1 Application Field and Working Principle

The IPD170N04NGBTMA1 is a Single Gate Grid Array (S-GGA) module containing four ultra-low gate charge n-channel MOSFETs for high speed switching applications. As a leading edge product developed by Infineon Technologies, the IPD170N04NGBTMA1 can be used in many different applications, such as in power electronics, portable devices, and wireless power systems. This article will provide a brief overview of the IPD170N04NGBTMA1\'s application field and its working principle.

Application Field

The IPD170N04NGBTMA1 is mainly used in power converter applications which require high-speed operation, such as Power Factor Correctors (PFCs) and DC-DC converters. It is also suitable for use in high-frequency applications, such as Class D audio amplifiers, or in space-constrained applications, such as mobile phones and handheld computers. Furthermore, the IPD170N04NGBTMA1 is suitable for use in low-power applications, owing to its efficient power dissipation.

Working Principle

The IPD170N04NGBTMA1 is a MOSFET module containing four ultra-low gate charge n-channel MOSFETs. It is based on the principle of 3D-MOSFET technology which utilizes smaller chip size and improved control models to reduce losses and improve power efficiency. Its superior performance comes from its low turn-on resistance, low gate charge, and fast switching speed. This ensures that the current and voltage can be switched efficiently and quickly.

The IPD170N04NGBTMA1 uses a vertical N-channel structure for the 4 MOSFETs, which is capable of providing efficient, enhanced switching performance and low power consumption. This is achieved by the efficient packing of the cells in the Module, which ensures uniform and efficient operation with better power dissipation. Moreover, the IPD170N04NGBTMA1 contains latch-up protection and is EMI-protected. This makes it suitable for use in a variety of devices including mobile phones, handheld computers and other space-constrained devices.

In summary, the IPD170N04NGBTMA1 is a single-gate grid array (S-GGA) MOSFET module containing four ultra-low gate charge n-channel MOSFETs. It is suitable for use in many different applications, including power converters, high-frequency applications, space-constrained applications, and low-power applications, due to its efficient power dissipation, low turn-on resistance, low gate charge, and fast switching speed. It also has latch-up protection and is EMI-protected.

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