IPI600N25N3GAKSA1

Vgs(th) (Max) @ Id:	4V @ 90µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	PG-TO262-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	136W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2350pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	60 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	25A (Tc)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IPI600N25N3GAKSA1 is a type of transistor that falls under the category of Field Effect Transistor (FET). This type of transistor is different from the basic bipolar junction transistor in that electrons and holes are not used to create current flow. Instead, a voltage is applied across a gate that allows electrical current to flow from the source to the drain. The IPI600N25N3GAKSA1 type of transistor has a maximum drain current of 60A, a max drain-source of 25V and a gate threshold voltage of 3V. The applications for this type of FET transistor vary according to what the specific requirements are. Generally, this type of device is used in circuits that require high power (high drain current) and low voltage (low gate threshold voltage). It is often used in power circuits such as high-power HVDC power supplies, high-efficiency converters, motor controllers, and other power management applications. In terms of working principle, the IPI600N25N3GAKSA1 transistor is similar to a regular FET transistor. When a voltage is applied to the gate, a channel of electrons is formed between the source and the drain. This channel allows electricity to flow to create a current between the two terminals. The size of the channel, which is based on the voltage applied to the gate, is what determines the amount of current that can be sourced or sunk. The higher the applied voltage on the gate, the larger the channel, and therefore, the higher the current that can be sourced or sunk. When the voltage is removed, the channel closes and current stops flowing. One of the key features of the IPI600N25N3GAKSA1 is its enhanced breakdown voltage capability. It has a drain-source voltage breakdown voltage of 25V which means it can produce higher voltage swings than other FETs without sacrificing performance. Additionally, its maximum gate-source voltage rating of 20V ensures that the transistor can handle higher voltage swings without damaging the gate voltage. The IPI600N25N3GAKSA1 is a high-power FET transistor that is suitable for a wide range of applications. Its rated maximum drain current of 60A makes it suitable for use in high-power applications such as motor controllers and power supplies. Its enhanced breakdown voltage capability and maximum gate-source voltage allow it to handle higher voltage swings without damaging the gate voltage. Finally, its low gate threshold voltage makes it suitable for low voltage applications such as voltage converters.

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