
Allicdata Part #: | IPI60R165CPAKSA1-ND |
Manufacturer Part#: |
IPI60R165CPAKSA1 |
Price: | $ 1.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 21A TO-262 |
More Detail: | N-Channel 650V 21A (Tc) 192W (Tc) Through Hole PG-... |
DataSheet: | ![]() |
Quantity: | 1000 |
500 +: | $ 1.76817 |
Vgs(th) (Max) @ Id: | 3.5V @ 790µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 192W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 165 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The IPI60R165CPAKSA1 is a single-channel, enhancement mode, low-side vertical double-diffused metal–oxide–semiconductor field-effect transistors (MOSFETs) designed for industrial and commercial applications. Based on the modern silicon-on-insulator (SOI) technology, the device offers a low on-resistance, fast switching performance and excellent EMI (electromagnetic interference) immunity. It features a very low gate-source capacitance, making it ideal for high-frequency or high-speed switching applications.
The IPI60R165CPAKSA1 device has two main terminals, the drain and the source, and a smaller gate terminal. The drain and the source are connected to the semiconductor body. By applying a voltage to the gate terminal, a current will be drawn from the drain to the source when a drain-source voltage of appropriate magnitude is present from the source to the drain. The high electrical resistance of the channel between the drain and the source effectively prevents the current from passing through.
When the voltage at the gate terminal is increased, more current will be drawn through the device, meaning that the resistance of the channel decreases. This phenomenon, known as the voltage transfer characteristic (VTC) is what makes the device useful for controlling current flow in power electronics applications.
The main benefit of the IPI60R165CPAKSA1 is its superior switching speed. As the device features a very low gate-source capacitance, the time needed to switch the device on and off is significantly less than traditional MOSFETs. This can provide advantages in applications that require fast switching such as power converters, motor drives, and lighting control.
The IPI60R165CPAKSA1 is also designed to be highly reliable. The SMOSFET is optimized to reduce the intrinsic body diode recovery losses and EMI (electromagnetic interference) radiation due to switching. Furthermore, the chip is capable of controlling high currents and can operate in a wide range of temperatures, making it ideal for industrial grade applications.
The IPI60R165CPAKSA1 can be used in a variety of applications including motor drives, switch mode power supplies, LED lighting control, and automotive applications. It is available in a variety of packages including a TO-220 and SOT-353 package with a maximum drain-source voltage of 40V, a maximum gate-source voltage of +20V/-4V, and a maximum junction temperature of 175°C.
The specific data is subject to PDF, and the above content is for reference
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