IPI60R520CPAKSA1 Allicdata Electronics
Allicdata Part #:

IPI60R520CPAKSA1-ND

Manufacturer Part#:

IPI60R520CPAKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 6.8A TO-262
More Detail: N-Channel 600V 6.8A (Tc) 66W (Tc) Through Hole PG-...
DataSheet: IPI60R520CPAKSA1 datasheetIPI60R520CPAKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 66W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IPI60R520CPAKSA1 is an N-type metal oxide semiconductor field-effect transistor (MOSFET). This type of transistor serves as a voltage-controlled electronic switch, which can turn on to allow current to flow across its terminals. The IPI60R520CPAKSA1 is used to switch electronic signals in a variety of electronic applications and is particularly suited for power control, load switching, and signal switching.

In operation, the IPI60R520CPAKSA1 is typically placed between the gate and drain electrodes. A voltage applied to the gate relative to the source (or bulk) will create an electrical field between the gate and the source. This field controls the current flowing between the source and the drain. As the gate voltage is increased, more current can flow through the MOSFET. Conversely, as the gate voltage is decreased, less current is allowed to flow.

The IPI60R520CPAKSA1 is popular in applications that require low-level on-state resistance and high breakdown voltage. It can be used in a variety of applications such as DC-to-DC conversion, PC board power reduction, voltage regulator circuits, motor control circuits, and solenoid control circuits.

In a typical power-switching application, the IPI60R520CPAKSA1 can be used to connect and disconnect an electronic device from a DC power supply. The conduction of current is controlled by a gate voltage, and this gives the user control over how much power is supplied to the device. The transistor can also be used to regulate the current or voltage in a circuit by controlling the amount of current that passes through the transistor. This can be used to regulate the speed of a motor, the intensity of a light, etc.

The IPI60R520CPAKSA1 is a power MOSFET with many advantages. It is easy to use, requires less gate-source voltage, is highly efficient, and has low on-state resistance. In addition, it is available in a variety of sizes and shapes, so it can be easily customized to fit specific applications.

Although the IPI60R520CPAKSA1 is a fairly simple device, its various configuration options and features have helped make it one of the most widely used power MOSFETs in the industry. Its popularity is due to its flexibility, efficiency, and low cost.

The specific data is subject to PDF, and the above content is for reference

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