IPN50R1K4CEATMA1 Discrete Semiconductor Products

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The IPN50R1K4CEATMA1 devices is a P-Channel logic level power field effect transistor (FET). It provides excellent current capability and features extremely low RDSon, making it ideal for load switching and DC-DC converter applications where very high efficiency and low losses are required. It is the perfect solution for portable applications where low on-resistance is particularly important due to the high current requirements caused by the power consuming features of today’s mobile devices. The device is in a space-saving DPAK package and has an efficiency rating of 90%.

The main features of the IPN50R1K4CEATMA1 include:

• Low on-resistance RDS(on) of 1.0 W.
• High power performance.
• Low gate charge.
• Low Ciss capacitance.
• Low Ron ripple.

The IPN50R1K4CEATMA1 is a P-Channel power MOSFET and is used in applications such as load switching and DC-DC converter applications. It is designed to provide an extremely low on-resistance and is capable of operating with gate voltages as low as 4 V. Its wide voltage range (4 to 18 V) allows it to be used in a variety of circuits.

The IPN50R1K4CEATMA1 operates by creating a voltage potential gate-source channel between the source and gate contacts. When the gate voltage is above the threshold voltage, a conductive channel is created between the source and the drain and current flows between the two. The on resistance of the device is determined by the voltage applied to the gate terminal compared to the drain-source voltage. In this way, the transistor can provide excellent current capability and low RDSon, making it ideal for load switching and DC-DC converter applications.

The IPN50R1K4CEATMA1 is designed to be used in portable applications where low on-resistance is required. The low RDSon and the extremely low gate charge make it ideal for use in mobile devices. The device also features lower Ron ripple across load changes, providing better performance for applications such as DC-DC converters. Additionally, its wide voltage range of 4V to 18V makes it suitable for use in a variety of circuits.

In conclusion, the IPN50R1K4CEATMA1 is a P-Channel power MOSFET providing excellent current capability and extremely low RDSon, making it an ideal device for a variety of applications that require low power dissipation and high current capability. It is particularly useful in portable and mobile devices, due to its low RDSon, low gate charge and low Ron ripple. Its wide voltage range makes it suitable for a wide range of applications, from load switching to DC-DC converters.

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