IPN50R2K0CEATMA1

Vgs(th) (Max) @ Id:	3.5V @ 50µA
Package / Case:	SOT-223-3
Supplier Device Package:	PG-SOT223
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	124pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	6nC @ 10V
Series:	CoolMOS™ CE
Rds On (Max) @ Id, Vgs:	2 Ohm @ 600mA, 13V
Drive Voltage (Max Rds On, Min Rds On):	13V
Current - Continuous Drain (Id) @ 25°C:	3.6A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IPN50R2K0CEATMA1 application field and working principleThe IPN50R2K0CEATMA1 is a P-channel enhancement-mode vertical power MOSFET comprised of advanced trench technology. It is designed to provide improved efficiency, superior power handling and reliability, and a simplified circuit design for the most demanding applications. This article will explain the application fields of the IPN50R2K0CEATMA1 and its working principle. Application FieldThe IPN50R2K0CEATMA1 has a wide range of applications, most notably in power supplies, motor control, and switching applications. It can be used to reduce circuit complexity and improve system efficiency by providing fast, efficient current switching and control. It is particularly suited for application with high-power density and demanding reliability requirements.One of the most common uses of the IPN50R2K0CEATMA1 is in power supplies. It is used to produce highly efficient, low noise and low-EMI power conditioning and DC-DC conversion. It can be used in both isolated and non-isolated applications. This makes it an ideal solution for applications that require reduced size and cost.The IPN50R2K0CEATMA1 is also useful in motor control applications. It provides fast current control and offers improved reliability over traditional motor control solutions. In addition, its low EMI levels make it a great choice for applications where noise interference must be minimized.The IPN50R2K0CEATMA1 is also well suited for switching applications. It provides fast and efficient current and voltage switching and can be used to control the power flow in a variety of systems. This makes it an ideal choice for applications that require high levels of power efficiency and low cost.Working Principle The working principle of the IPN50R2K0CEATMA1 is based on the principle of a MOSFET (Field-Effect Transistor) which consists of a channel, formed in an insulated layer between the two metal layers. The insulated layer is known as the gate oxide, and it is the layer that decides how much current can flow through the metal layers.The channel is controlled by an external voltage applied to the gate oxide. When a positive voltage is applied to the gate oxide, the electrons in the channel are repelled away from the oxide layer and towards the drain, allowing current to flow through the channel. This is known as an enhancement mode MOSFET, and it is the type of MOSFET used in the IPN50R2K0CEATMA1.The IPN50R2K0CEATMA1 is designed with an advanced trench technology, which allows for improved power handling and reliability. This is due to its optimized structure which ensures that the electric fields are more effectively distributed throughout the structure, thus improving efficiency and reducing losses.The IPN50R2K0CEATMA1 is also designed to provide simplified circuit design for more demanding applications. Its low on-resistance is designed to minimize power consumption, and its low voltage capability ensures that the MOSFET can be used in a wide range of applications.Overall, the IPN50R2K0CEATMA1 is an ideal device for a wide range of applications, offering improved efficiency, superior power handling, and simplified circuit design. It is highly reliable with low EMI levels, making it a great choice for any application that needs improved power efficiency.

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