IPN50R800CEATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPN50R800CEATMA1 is a high-performance n channel metal-oxide-semiconductor field-effect transistor (MOSFET) from International Rectifier (IR). This device is designed for use in applications such as power switching, DC-DC conversion, and power supply and voltage regulation. This device is available in a surface mount, Lead-free, Pb-free package.

Features of IPN50R800CEATMA1

The main features of IPN50R800CEATMA1 are:

• High-voltage, low on-resistance
• Logic-level gate drive
• 100% Rg tested
• RoHS compliant package
• DirectFET® technology
• Excellent thermal performance

Applications

IPN50R800CEATMA1 is suitable for several applications, such as:

• Power supply and voltage regulation
• DC-DC conversion
• Power switching
• Power management

Working principle

The IPN50R800CEATMA1 is made of a metal-oxide semiconductor (MOS) structure. The device has an internal drain-to-source breakdown voltage of 800 V. When the gate voltage is applied, the device is turned on and the drain current (Id) flows through the MOS structure. The device has a low on-resistance to ensure that the power is properly regulated and transferred efficiently. The low switching losses make it ideal for applications where power efficiency is important. The device is also designed to handle the large voltage spikes that are associated with power management applications.

The device is equipped with an integrated thermal protective diode that provides short circuit protection and helps to prevent device damage in case of overcurrent or short circuit conditions. The protective diode also prevents damage from electrostatic discharge (ESD) and is certified for electrostatic discharge immunity up to 2000V.

IPN50R800CEATMA1 is easy to use and the logic gate drive provide for high-performance on/off switching with low power dissipation. The device is also RoHS compliant and can be used in various industries, from power management to data communications.

In summary, the IPN50R800CEATMA1 is a high-performance n-channel MOSFET designed for applications such as power switching, DC-DC conversion, and power supply and voltage regulation. It has a high-voltage, low on-resistance and an integrated protective diode. It is also RoHS compliant and easy to use, making it an ideal solution for power management applications.

The specific data is subject to PDF, and the above content is for reference