IPP45N06S3L-13

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The IPP45N06S3L-13 is a high-voltage, high-speed, logic-level N-channel enhancement mode power MOSFET designed using International Rectifier’s advanced trench MOSFET technology.

This device is suitable for use in a wide variety of switching applications and its low gate charge, fast switching speed, low on-resistance, and low gate threshold voltage makes it particularly suitable for Class D audio amplifier applications. It is also suitable for motor drive applications and DC/DC converters.

Application Field:

The IPP45N06S3L-13 has a wide range of applications, including battery management systems, DC/DC converters, power inverters, Class D audio amplifiers, LED lighting, motor drives, and a variety of other industrial, commercial and automotive applications.

Working principle:

The IPP45N06S3L-13 is an N-channel enhancement mode MOSFET which uses a MOS structure to control the on/off state of a channel between the drain and source of the device. When an appropriate gate voltage is applied to the gate of the device, this control structure will become thin allowing electrons to flow freely through the channel.

This device is rated for up to 500V and can handle currents of up to 60A. It has a maximum low side RDS(on) of 1.1ohms and a maximum high side VGS of 20V. This device has a low gate charge of 4.3nC and a fast switching speed of 40ns.

This MOSFET utilizes a logic-level gate drive voltage, making it suitable for use with logic-level gate drive circuitry such as microcontroller peripherals, MOSFET drivers, and other digital control systems.

This device also features UL94 V-0 flame retardancy rating, ion resistant electrodes, and a non-isolated package.

In conclusion, the IPP45N06S3L-13 is an ideal device for many power switching applications. It features high-voltage, high-speed, logic-level control, low gate charge and fast switching speed, making it suitable for a wide variety of applications.

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