IPP45N06S4L08AKSA2 Allicdata Electronics
Allicdata Part #:

IPP45N06S4L08AKSA2-ND

Manufacturer Part#:

IPP45N06S4L08AKSA2

Price: $ 0.62
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 45A PG-TO220-3
More Detail: N-Channel 60V 45A (Tc) 71W (Tc) Through Hole PG-TO...
DataSheet: IPP45N06S4L08AKSA2 datasheetIPP45N06S4L08AKSA2 Datasheet/PDF
Quantity: 1000
500 +: $ 0.55241
Stock 1000Can Ship Immediately
$ 0.62
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 71W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPP45N06S4L08AKSA2 is a MOSFET Transistor that belongs to a family of discrete semiconductor devices designed for switching and amplification purposes. The device is designed to enable the user to handle high power; low current and enhances the common source applications. The device can be used in a wide range of applications include gate drive, motor control and power management.

The IPP45N06S4L08AKSA2 is a single-channel enhancement-mode MOSFET transistor which contains an insulated-gate field-effect. It is fabricated by using a vertical DMOS process and optimized for low-voltage gate drive applications. The device has a gate oxide thickness twice as thick as comparable devices for improved reliability. The device is designed to enable greater power density, higher efficiency and faster operation.

The IPP45N06S4L08AKSA2 has a low on-state resistance which is useful for applications requiring low power loss and high efficiency. This is important in switching applications where the current flow is high. The low gate threshold voltage enables the device to operate at lower supply voltage and reduces power consumption. The device is also capable of operating at high frequency which is useful for applications such as switching power supplies, DC-to-DC converters and amplifying systems.

The working principle of the device is based on the idea of a voltage applied to the gate of a MOSFET device to control its current conduction path or channel. The device consists of a metal oxide semiconductor field effect transistor which has two terminals connected to the drain (on which there is an electric field) and source (on which there is a voltage supply). The metal oxide separates the drain and source, and their charges are balanced. The gate terminal is used to control the electric field of the drain and source, and determines the conductivity of the MOSFET. The key feature of the device is that a small change in the gate voltage causes a large change in the channel current. This allows for excellent control over the device.

Due to its excellent performance and cost-effective nature, the IPP45N06S4L08AKSA2 is an ideal choice for many applications including motor drives, power management, and switching power supplies. Its low on-state resistance and low power loss make it ideal for high-power and low current applications and the low gate threshold voltage allows it to operate at lower supply voltages, reducing power consumption.

The specific data is subject to PDF, and the above content is for reference

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