IPP45P03P4L11AKSA1

Vgs(th) (Max) @ Id:	2V @ 85µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	58W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3770pF @ 25V
Vgs (Max):	+5V, -16V
Gate Charge (Qg) (Max) @ Vgs:	55nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	11.1 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	45A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IPP45P03P4L11AKSA1 is a high-side N-Channel MOSFET that provides advanced input features and optimal efficiency. It features low operating loss, fast switching, and wide temperature and voltage range capability. The IPP45P03P4L11AKSA1 is designed to minimize power loss and reduce heat generation in power switching applications. The device is thus ideal for use in power management systems and other power-conversion applications.

Application Field

The IPP45P03P4L11AKSA1 is ideally suited for a variety of applications including power management systems and power conversion. It can be used in a wide range of power-switching applications, such as motor control, industrial, and automotive systems. In addition, it is suitable for a wide range of battery-powered systems, such as cellular phones, laptop computers, and portable media players.

Working Principle

The working principle of the IPP45P03P4L11AKSA1 is based on its N-channel design. The device uses an N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) and effects controlled electrical current through a gate voltage. The strength of the gate voltage determines the amount of current that can flow through the channel, thus providing a level of digital control. When the gate voltage is increased, more current can flow through the device and thus control the entire circuit.

Advantages

The main advantages of the IPP45P03P4L11AKSA1 are low power dissipation and high efficiency. The low power dissipation is due to the design of the channel, which has a low resistance and leakage current. This makes the device well suited for applications where there is a need to reduce power consumption. Furthermore, the device has a wide drain-to-source voltage range, making it suitable for use in a wide range of voltages. Moreover, its fast switching time makes it suitable for high speed applications. Additionally, the device\'s low input capacitance makes it ideal for applications where low input resistance is required.

Disadvantages

The main disadvantage of the IPP45P03P4L11AKSA1 is its limited operating temperature range. The device has a maximum operating temperature of 125°C, which is lower than that of some competing MOSFETs. In addition, the device has a relatively high threshold voltage, making it less suitable for low-voltage applications.In conclusion, the IPP45P03P4L11AKSA1 is a high-side N-Channel MOSFET suitable for a variety of power-switching applications. Its low power dissipation and wide temperature range make it an ideal choice for a variety of applications. Its fast switching time and low input capacitance also make it well suited for a variety of applications. However, its limited operating temperature range and relatively high threshold voltage make it less suitable for some applications.

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