IPP90N06S404AKSA2

The IPP90N06S404AKSA2 is an N-channel enhancement mode Field Effect Transistor (FET) specifically designed for use in automated test equipment, medical applications, automotive, consumer electronics and other industrial applications. It is an advanced, high-frequency and low-power integrated FET with superior performance. It is manufactured using thick silicone oxide insulation. The FET’s superior performance is due to its advanced cell architecture, resulting in low resistance and high gain.

This FET has a maximum drain-source voltage of 90V, a maximum current of 57 A, and a high breakdown voltage of 200V. The FET also has a fast switching speed and excellent thermal stability, making it suitable for applications such as DC-DC converters, displays, PWM controllers, and motor control.

The IPP90N06S404AKSA2 has two terminals: the source, which is connected to the power source and the drain, which is connected to the load. The gate terminal is connected to the control circuit, which controls the voltage and current in the drain and source of the FET. When a voltage is applied to the gate terminal, it creates an electrical field, which makes the FET conductive.

The working principle of the FET is quite simple; the voltage applied to the gate controls the amount of current passing between the source and drain. When the gate voltage is high, the current passing between the source and drain increases, allowing the FET to act as an on switch. When the gate voltage is low, the current passing between the source and drain decreases, allowing the FET to act as an off switch.

The FET is manufactured using a high-precision thin-film process, which enables it to operate reliably at high temperatures. Its small size, low power consumption, and high switching frequency make it an ideal choice for automotive, medical, and industrial applications. The FET also offers excellent reliability and long life, making it a cost-effective solution.

In conclusion, the IPP90N06S404AKSA2 FET is an advanced, high-performance and low-power integrated FET specifically designed for use in automated test equipment, medical applications, automotive, consumer electronics and other industrial applications. It offers high breakdown voltage, low gate charge, fast switching speed, and excellent temperature stability. Its small size, low power consumption, and high switching frequency make it an ideal choice for automotive, medical, and industrial applications.