IPP90N06S4L04AKSA2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPP90N06S4L04AKSA2 is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) developed by Infineon. It is a single-die MOSFET, incorporating a hundred functionalities into a single chip. This transistor provides high level of performance, making it suitable for applications such as power-switching circuits, battery management, and other sophisticated circuit designs that require precise control of switching parameters, such as current, voltage, and power.

The transistor is made of n-channel enhancement mode silicon gate power MOSFETs. The Infineon IPP90N06S4L04AKSA2 has a breakdown voltage of 40V, gate-source voltage of -20V to +20V, and on-state resistance of 0.06 Ohms. This remarkable feature makes it optimised for high-current load switching applications. It also has a gate-charge of 57nC and a maximum drain current of 90A. This makes it suitable for applications in which current control and load switching of high-currents is required.

The working principle of the IPP90N06S4L04AKSA2 is based on the fundamental behaviour of MOSFETs. The transistor consists of three terminals: the source, gate, and drain. The source and drain are connected to the external circuit, while the gate is connected to the control voltage. The control voltage has to applied in order to switch the MOSFET on, which in turn allows the current to flow from the drain to the source terminal. The MOSFET behaves like a switch, and when it is off, no current can pass through the transistor. This behaviour is used in many applications where precise control of current is required.

The IPP90N06S4L04AKSA2 is typically used in applications such as power-switching circuits, battery management, and other sophisticated circuit designs. It is also used in applications such as motor control, power supplies, and power conversion systems. In these applications, the transistor acts as a switch, allowing precise control of the current as well as switching of high-current loads. In addition, it can also be used in many automotive applications such as DC/DC converters, LED lighting, and active bridge circuits.

In conclusion, the Infineon IPP90N06S4L04AKSA2 is a MOSFET transistor designed for high-current load switching applications. It has a breakdown voltage of 40V, gate-source voltage of -20V to +20V, and on-state resistance of 0.06 Ohms, making it perfectly suited for applications where current control is of utmost importance. It is typically used in power-switching circuits, battery management, motor control, power supplies, and power conversion systems.

The specific data is subject to PDF, and the above content is for reference