IPP90R340C3XKSA1

The IPP90R340C3XKSA1 is a third generation insulated gate bipolar transistor (IGBT) that is designed for high power switching. It is popularly used in solar inverters and motor drives, and is steadily becoming the go-to transistor for high-power applications.The current generation of the IGBTs are characterized by their ability to handle higher voltages and currents, improved switching characteristics, and faster switching speeds. This makes them particularly attractive due to the reduced area occupied by this type of device.

Overview of the IPP90R340C3XKSA1

The IPP90R340C3XKSA1 is a 900V N-channel IGBT that is based on the Super-junction technology. It can operate up to 34A at 50°C. Its low forward voltage drop reduces the power dissipation making it highly suitable for energy saving applications. It also features an on-state resistance of 700mΩ at an operating temperature of 25°C making it suitable for high frequency operating applications. Its maximum gate current is 15mA making it compatible with most gate drive circuits.

Applications

The IPP90R340C3XKSA1 is suitable for a variety of applications including high power inverters, motor drives, and HVDC converters. This transistor has a variety of features that make it especially suitable for these applications. Its Super-junction technology makes it well-suited for switching high-power applications. Its low forward voltage drop ensures lower device losses and reduced power dissipation. It also supports high current operation with a maximum current rating of 34A. Finally, its fast switching speed allows for efficient power management.

Working Principle

The working principle of an IGBT is similar to that of a MOSFET, with the main difference being the presence of an additional p-n junction between the source and the drain. This junction acts as the main switch, wherein a suitable voltage applied to the gate can control the drain-source current. When the gate voltage is enabled, the junction is biased and current flows through the device leading to a current amplification effect. When the gate voltage is disabled, the junction is reversed bias and no current can flow through the device. This is how the IGBT operates as a switch.

Conclusion

The IPP90R340C3XKSA1 is a third generation insulated gate bipolar transistor designed for high-power switching applications. It features Super-junction technology, low forward voltage drop, and high current ratings. This makes it suitable for a wide range of applications including high power inverters, motor drives, and HVDC converters. Its working principle is the same as a MOSFET, with the main difference being the presence of an additional p-n junction between the source and the drain.