Allicdata Part #: | IPS13N03LAG-ND |
Manufacturer Part#: |
IPS13N03LA G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 30A IPAK |
More Detail: | N-Channel 25V 30A (Tc) 46W (Tc) Through Hole PG-TO... |
DataSheet: | IPS13N03LA G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | OptiMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 12.8 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1043pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 46W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO251-3 |
Package / Case: | TO-251-3 Stub Leads, IPak |
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Introduction
IPS13N03LA G is a cost-effective and high performance power MOSFET in small package, which can be used in a wide range of applications. This article will discuss the application field and working principle of IPS13N03LA G.
Application Fields
IPS13N03LA G is suitable for various load switch application, such as remote radio control, off-line power factor correction, AC/DC converter, motherboard, or industrial system. Its high voltage and low on resistance make it perfect for benefits such as system efficiency and cost optimization.
• Remote Radio Control
IPS13N03LA G is designed for remote radio control applications. It is suitable for the DC-DC input voltage range from 0 to 39V, and offers excellent signal performance for the digitalized output. It can also be used for signal transmission control, protecting against over-voltage and under-voltages.
• Offline Power Factor Correction
IPS13N03LA G is suitable for power factor correction applications, such as LED drivers, LED displays and solar panels. It features a low on resistance that can minimize power loss and a wide operating temperature range. The product also offers a good stability throughout the working life and high reliability.
• AC/DC Converter
IPS13N03LA G is suitable for various AC/DC converter applications, such as high efficiency always-on power supplies, adapters, house hold electronics, and DC converters. It offers a low on resistance and a high voltage, enabling it to provide excellent power conversion efficiency. It is also low power consumption and high electrostatic discharge protection.
• Motherboard
IPS13N03LA G can be used in motherboard applications. It is suitable for a wide input voltage range, which can protect the system from over-voltages and under-voltages. It provides fast, reliable over-voltage protection with minimum impact on the system, and is designed for long-term reliability.
• Industrial System
IPS13N03LA G is suitable for various industrial system applications, such as industrial electrical systems, automotive systems and so on. It offers a high switching speed that enables it to provide a fast response time. It also features a high level of electrostatic discharge protection.
Working Principle
IPS13N03LA G uses Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology.This type of transistor works through the phenomenon of field effect. The principle is as follows: by applying a voltage to the gate of the MOSFET , a conductive channel is formed in the transistor between the source and the drain. By controlling the gate voltage, the current between the source and the drain is controlled. It is this principle which makes the MOSFET so useful for power switching applications.
Conclusion
In conclusion, IPS13N03LA G is a cost-effective and high performance power MOSFET in small package. It can be used in a wide range of applications, such as remote radio control, off-line power factor correction, AC/DC converter, motherboard, or industrial system. It works on the Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology principle.
The specific data is subject to PDF, and the above content is for reference
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