IPW90R120C3FKSA1

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IPW90R120C3FKSA1 is a power MOSFET transistor. It is in a low–cost TO-220AB full-pack package, specifically designed for applications involving high-current and low-voltage switching, making it ideal for systems like motor control and power supplies. It is a single MOSFET transistor from the R–Series. The R–Series of MOSFET transistors are designed for high-power and high-current applications, giving them greater performance and control than other types of transistors.

The IPW90R120C3FKSA1 has a maximum drain–source voltage of 120V, a drain–source breakdown rating of 90A, an on–resistance of 72mΩ at 10V and a gate threshold voltage of 3–6V. It also has a maximum temperature rating of 175°C, meaning it can handle higher temperatures than other types of transistors, making it suitable for many power applications. Additionally, it has a reverse transfer capacitance of 2.6 pF, which allows it to act as a switch, controlling and regulating power applications with greater efficiency and accuracy.

The IPW90R120C3FKSA1 can be used in a number of applications, including: motor control, DC–DC converters, power supplies, and other high–current, low–voltage switching applications. It is favoured for these applications due to its high current–handling capabilities and low temperature rating. It is also popular for its low gate threshold voltage, allowing for more precise control and regulation. Furthermore, its reverse transfer capacitance enables it to efficiently control and regulate applications with greater precision and accuracy.

The IPW90R120C3FKSA1 works by providing a controlled path between its drain and source terminals. An electric field is created between the gate and the source, controlling the flow of current. The amount of current that flows is determined by the voltage applied to the gate; the higher the voltage, the greater the flow of current. The gate threshold voltage determines how much voltage is required to turn the transistor on, and the drain–source breakdown rating determines how much current can be handled by the transistor.

In conclusion, the IPW90R120C3FKSA1 is a power MOSFET transistor from the R–Series, designed for high–current, low–voltage applications. It has a maximum drain–source voltage of 120V, a drain–source breakdown rating of 90A, an on–resistance of 72mΩ at 10V and a gate threshold voltage of 3–6V. It is suitable for applications like motor control, DC–DC converters, and power supplies, due to its high current–handling capabilities and low temperature rating. It works by providing a controlled path between its drain and source terminals, with the amount of current that flows determined by the voltage applied to the gate. It is a reliable transistor, suitable for a variety of applications.

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