IPW90R340C3FKSA1

Vgs(th) (Max) @ Id:	3.5V @ 1mA
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	208W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2400pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	94nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	340 mOhm @ 9.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	15A (Tc)
Drain to Source Voltage (Vdss):	900V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IPW90R340C3FKSA1 Application Field and Working Principle

IPW90R340C3FKSA1 is a high cutting edge power MOSFET (metal oxide semiconductor field effect transistors) which belongs to the single type of transistor. This type of power MOSFET is widely used for applications that require low to moderate power conversion, such as RF (Radio Frequency) amplifiers, current mirrors, and small inverters.The IPW90R340C3FKSA1 is designed to operate in a wide range of applications including audio, power electronics and DC power supplies. It has a total gate charge of 1.5A, an on-resistance of 1.17 mOhms, and a maximum drain current (ID) of 11A at 25°C. The device also offers a high output capacitance of 59.3 nF and a low total gate charge of 141 nC.The working principle of the IPW90R340C3FKSA1 is based on the MOSFET technology, whereby a MOSFET is used to control the flow of current in an electronic circuit. The device consists of a source, drain, and gate which are interconnected in such a way so as to form a channel. A voltage applied to the gate region is used to regulate the amount of current passing through the channel.When an appropriate voltage is applied to the gate, the electrons in the channel are pulled towards it and the channel is positively charged. This results in a depletion zone being created, blocking the current from flowing through the drain and source terminals. When the voltage on the gate is reversed, the depletion zone disappears and current is able to flow through the MOSFET in one direction.The IPW90R340C3FKSA1 is a high frequency power MOSFET, with a very good output capacitance to gate charge ratio. This makes the device suitable for usage in high power switching applications such as in DC-DC converters, power circuits and automobiles. It also features a very low on-state resistance, making it ideal for low voltage switching applications that imply high power.Furthermore, the device is optimized for low gate drive requirements and offers both better thermal performance and improved switching times over traditional power MOSFETs. This makes the IPW90R340C3FKSA1 ideal for high speed applications such as power management, audio amplifiers, and motor drives.In conclusion, the IPW90R340C3FKSA1 is a high performance power MOSFET that offers a very good output capacitance to gate charge ratio, a low on-state resistance, and improved switching times. The device is ideal for low voltage switching applications that require high power, such as DC-DC converters, power circuits, and automobiles, as well as for high speed applications such as power management, audio amplifiers, and motor drives.

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