IPW90R1K0C3FKSA1 Allicdata Electronics
Allicdata Part #:

IPW90R1K0C3FKSA1-ND

Manufacturer Part#:

IPW90R1K0C3FKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 900V 5.7A TO-247
More Detail: N-Channel 900V 5.7A (Tc) 89W (Tc) Through Hole PG-...
DataSheet: IPW90R1K0C3FKSA1 datasheetIPW90R1K0C3FKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 89W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IPW90R1K0C3FKSA1 is a kind of power MOSFET, which belongs to the category of Field-Effect Transistors (FETs). It has a single package in the form of dual in-line package, with the gate being gold-plated on the gate electrode. This single MOSFET is widely used in applications in power electronics, motor control, and industrial automation.

The operation of this kind of transistor is based on the principle of the MOSFET, which is a type of FET that is capable of providing power with low loss and high efficiency. The working principle of a MOSFET is to control the flow of current by regulating the voltage between the source and the drain. The gate voltage can be changed, which controls the voltage between the source and drain. This allows the MOSFET to regulate the current passing through it to the desired level.

In an FET, there are two terminals, one being the gate and the other being the source. There is also a third terminal, the drain, that is connected to the source. The gate contains two electrical connections, one for the source and the other for the drain. When the gate voltage is applied, the voltage between the source and drain is changed. This creates a barrier between the two terminals, which allows the flow of current to be controlled in one direction.

The IPW90R1K0C3FKSA1 transistor is a purpose-designed power MOSFET, which is suitable for applications with high current or voltage levels. It can be used in applications such as motor control, DC-DC converters, and high-power amplifiers. It has high switching speed, allowing it to work in high-speed applications. As it has an on-resistance as low as 0.9 ohms, it can provide low losses even at high current levels. This also reduces power dissipation, making it ideal for power efficiency applications. It also has great thermal stability, ensuring reliability and a long lifetime.

As this power MOSFET has a single package and the gate being gold-plated on the gate electrode, it is suitable for applications with high-frequency switching, providing exceptional switching performance even at high frequency. The device also has excellent temperature stability and its electrical characteristics remain consistent over a broad temperature range. In conclusion, the IPW90R1K0C3FKSA1 is a widely used single MOSFET which provides reliable power with low losses and high efficiency. Its use in motor control, industrial automation, and DC-DC converters makes it a reliable choice. Its small size, high switching speed and low on-resistance makes it suitable for a variety of demanding applications.

The specific data is subject to PDF, and the above content is for reference

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