IRF2907ZSPBF Allicdata Electronics
Allicdata Part #:

IRF2907ZSPBF-ND

Manufacturer Part#:

IRF2907ZSPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 75A D2PAK
More Detail: N-Channel 75V 160A (Tc) 300W (Tc) Surface Mount D2...
DataSheet: IRF2907ZSPBF datasheetIRF2907ZSPBF Datasheet/PDF
Quantity: 186
Stock 186Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF2907ZSPBF is a high-performance single-ended N-Channel MOSFET, designed to streamline the application in the field of power switching by providing superior levels of efficiency, reliability and ruggedness. This device offers an impressive power handling level, an extremely fast response capability and an effective switching system which enables it to perform its power usage duties with minimal losses.

IRF2907ZSPBF is an ideal choice for power switching in modern systems for applications such as audio amplifiers, DC-to-DC converters and motor control systems. Its superior heat transfer capabilities, low-voltage dropout design and reliable protection features make it one of the top contenders in today’s power switching market.

The working principle of the IRF2907ZSPBF is based on MOSFET (metal-oxide-semiconductor field-effecttransistor) technology, which is used in power switching applications. A MOSFET is a four-terminal device used to control the flow of electrical current between two terminals by varying the voltage applied to its gate terminal.

In the case of the IRF2907ZSPBF, the two terminals are the drain and the source terminals. The gate terminal is connected to an appropriate control device (for example, a microcontroller or a driver circuit) and the voltage applied to this terminal controls the flow of current through the device.

The way this is achieved is by changing the resistance of the device based on the voltage applied at the gate terminal. When no voltage is applied, the resistance is high and no current will flow between the source and drain terminals. When a voltage is applied, the resistance will decrease and current will flow through the device.

The device also features a protection feature which will shut down the device if the current through the device is higher than its rated maximum current. This protection feature helps to protect the device from damage due to short circuits and other over-current situations.

The IRF2907ZSPBF is a highly efficient power switching device thanks to its superior performance characteristics and robust protection features. Its use in applications such as audio amplifiers, DC-to-DC converters and motor control systems can help to optimize the efficiency of these systems, along with the level of protection they offer.

The specific data is subject to PDF, and the above content is for reference

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