IRF2807S Allicdata Electronics
Allicdata Part #:

IRF2807S-ND

Manufacturer Part#:

IRF2807S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 82A D2PAK
More Detail: N-Channel 75V 82A (Tc) 230W (Tc) Surface Mount D2P...
DataSheet: IRF2807S datasheetIRF2807S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 13 mOhm @ 43A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF2807S is a type of power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for higher voltage and current switching applications. It is used in power management and motor control circuits, and has been successfully applied in various types of industrial, automotive and consumer electronics. This article will discuss the application fields and working principle of the IRF2807S.

Application Fields

The IRF2807S is suitable for power switching circuits such as DC-DC converters, motor control and light dimming applications. It is especially useful for applications requiring high efficiency and complex waveforms, because of its higher switching frequencies and reduced switching losses. The MOSFET can be used to drive inductive and capacitive loads, such as motors and light-emitting diodes (LEDs). It also provides very low on-state resistance, resulting in high power-handling capability. The IRF2807S has been used in AC mains-powered circuits, such as UPS systems, static-switched phase control and high-power AC-to-DC converters. It is also used in automotive applications such as variable frequency drives, and in consumer electronics such as mobile phones and laptop computers.

Working Principle

The IRF2807S is an enhancement-mode MOSFET, meaning that it uses a channel of n-type material between a source and a drain. This channel is used to control the flow of current between the two terminals. The main component of the transistor is a gate, which is a conductive material. When a voltage is applied to the gate, a current is induced in the transistor, which causes the current to flow between the source and the drain. This allows the transistor to operate as a switch and control the flow of current. The IRF2807S is rated to handle up to 10A at a voltage up to 100V.

The IRF2807S is also capable of performing multiple switching functions. It can be used to switch between two different output states (on/off), as well as perform pulse width modulation (PWM) to control the speed of a motor. It is also capable of frequency-agile switching, allowing it to switch between two different frequenci

The specific data is subject to PDF, and the above content is for reference

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