IRF2907ZSTRLPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRF2907ZSTRLPBFTR-ND |
Manufacturer Part#: |
IRF2907ZSTRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 75A D2PAK |
More Detail: | N-Channel 75V 160A (Tc) 300W (Tc) Surface Mount D2... |
DataSheet: | IRF2907ZSTRLPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 270nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF2907ZSTRLPBF is a widely used single N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, or MOSFET) designed by International Rectifier Corporation. Its main applications are in power management, power control, and voltage regulation. This type of MOSFETFET is used in many electronic devices such as computers, televisions, cell phones and other digital products.
IRF2907ZSTRLPBF has a series of characteristics that make it an ideal choice for power management applications. For example, it is mechanically robust and has an extremely low input and output capacitance, making it ideal for high speed and low power digital designs. It also has a low thermal resistance and package, allowing for better thermal performance. Moreover, it is also useful for low voltage and low power applications as it is able to handle a wide voltage range of 2 - 30V.
IRF2907ZSTRLPBF can be used in various types of applications in power management. Its main application is in integrated circuits (ICs) used to control and regulate power consumption. It is also suitable for applications that require the switching of high frequencies. For example, it can be used in the switching circuits of communication systems and high frequency power converters. In addition, it can also be used in energy efficiency applications, such as reducing the power consumption of light bulbs.
The working principle of IRF2907ZSTRLPBF is based on the metal-oxide-semiconductor field-effect transistor (MOSFET) technology. MOSFETs are a special kind of semiconductors whose electrical properties can be adjusted by their environment. That is, the output of a MOSFET can be changed by changing the applied voltage or the electric charge on the gates. This allows for the regulation of current flow without the need for additional switching devices.
In the case of IRF2907ZSTRLPBF, the applied voltage or electric charge determines the current that flows through the device. It works by controlling the amount of electrons that are allowed to flow between the source and drain of the device. When the applied voltage is low, the MOSFET conducts well, allowing for a large amount of current to flow. Conversely, when the applied voltage is high, the current flow is reduced. Therefore, by applying the appropriate voltage or electric charge, the current flow through the MOSFET can be controlled.
IRF2907ZSTRLPBF is suitable for a wide range of applications in power management and voltage regulation. It is a robust and reliable device that can be used in high speed and low power applications. It is also suitable for applications that require the switching of high frequencies, such as communications systems and power converters. Finally, it is an ideal choice for applications that require energy efficiency, such as reducing the consumption of light bulbs.
The specific data is subject to PDF, and the above content is for reference
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