IRG4BC10S

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IGBT (Insulated Gate Bipolar Transistor) is an advanced power semiconductor device which integrates the bipolar transistor and insulated gate field-effect transistor (MOSFET). IRG4BC10S, an IGBT module series, offers superior performance, low conduction and switching losses and fast short circuit protection. The value of this device lies in its ability to control voltage and current with precise synchronization.

IRG4BC10S is a 600V single IGBT module designed for various applications with superior performance and reliability. It is an outstanding system device with its fast switching capability, safety and highly reliable module design. This device combines IGBT and FRD (Fast Recovery Diode) with a wide variety of gate driver ICs. It is ideally suited for variable speed drive, renewable energy application and power factor correction applications.

The main application fields of IRG4BC10S include motor drive, frequency conversion and solar. In the motor drive, this device is used in variable speed drives, energy storage, industry automation and more. These drives are used to control motor speed and torque depending on various conditions, and IRG4BC10S device is preferred over other types of drives due to its fast switching times. IRG4BC10S is also used in variable frequency drive systems, where it is used to convert AC to DC power for AC motor operation.

In addition, IRG4BC10S is used in renewable energy applications. It is used for power factor correction, maximizing power transfer and for high voltage media conversion. It is also used for photovoltaic systems, Wind Power Converter systems, Fuel Cell and Solar Thermal Power systems.

Regarding the working principle, IRG4BC10S contains IGBT and a Fast Recovery Diode (FRD). The IGBT acts as a switching device by controlling the voltage and current with precise synchronization. The Fast Recovery Diode (FRD) provides additional protection against short circuits. The voltage waveform of IGBT depends on the gate drive pulses current and charge characteristics of the gate circuit.

The gate drivers consist of pre-driver circuits and drivers. The pre-driver circuit consists of a charge pump and current limiter, while the drivers use the protections such as under voltage, over voltage and over temperature. The gate drive voltage of the IGBT is provided by the pre-driver, which controls the IGBT current during the switching time. The FRD is also driven by the same pre-driver circuit.

Furthermore, the IRG4BC10S module is also equipped with external components such as passive filters and snubbers, which are connected to the IGBT and FRD terminals to reduce EMI and improve noise immunity. The snubber also reduces overshoot voltage and ringing of the waveform.

In summary, the IRG4BC10S is an advanced power semiconductor device which combines IGBT and FRD and features high switching speeds, low loss and fast short-circuit protection. It can be used in various applications such as motor drive, renewable energy and power factor correction, depending on its specifications. Its working principle is based on gate control pulses and pre-drive circuits that allow precise voltage and current control with minimal switching loss.

The specific data is subject to PDF, and the above content is for reference