IRG4BC15UD-SPBF Allicdata Electronics
Allicdata Part #:

IRG4BC15UD-SPBF-ND

Manufacturer Part#:

IRG4BC15UD-SPBF

Price: $ 0.85
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 14A 49W D2PAK
More Detail: IGBT 600V 14A 49W Surface Mount D2PAK
DataSheet: IRG4BC15UD-SPBF datasheetIRG4BC15UD-SPBF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 0.85000
10 +: $ 0.82450
100 +: $ 0.80750
1000 +: $ 0.79050
10000 +: $ 0.76500
Stock 1000Can Ship Immediately
$ 0.85
Specifications
Power - Max: 49W
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 28ns
Test Condition: 480V, 7.8A, 75 Ohm, 15V
Td (on/off) @ 25°C: 17ns/160ns
Gate Charge: 23nC
Input Type: Standard
Switching Energy: 240µJ (on), 260µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Current - Collector Pulsed (Icm): 42A
Current - Collector (Ic) (Max): 14A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Last Time Buy
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IRG4BC15UD-SPBF is an insulated gate bipolar transistor (IGBT) that is suitable for use in applications ranging from motor control to renewable energy, and is a popular component of inverters. The transistor has a collector emitter voltage of 600V, a drain current of 15A and a gate trigger voltage of 10V. This unit has a fast switching speed and a low gate charge, making it ideal for applications such as computer uninterruptable power supplies, LED drivers, motor speed controllers and other applications in the renewable energy sector.

An IGBT is a type of transistor that combines the characteristics of traditional transistors known as bipolar junction transistors (BJTs) and metal oxide semiconductor field effect transistors (MOSFETs). The advantage of using IGBT transistors for many applications is that they offer higher levels of performance compared to BJT or MOSFET transistors.

IGBTs generally operate as an insulated gate that attracts a current flow and modulates it, thus allowing the IGBT to function as either a switch or a voltage regulator. This gate insulation prevents any current from flowing from the gate to the source of the transistor and therefore achieves higher levels of accuracy and protection from external voltage and currents.

The IRG4BC15UD-SPBF is a type of IGBT known as a switching transistor, which is designed for use in applications where there is a need for high current delivery and fast switching speeds. The device is designed in such a way that it can act as either a switch for a circuit to be turned off or on, or a voltage regulator for controlling the voltage levels within a circuit.

The IRG4BC15UD-SPBF operates on a principle known as the Miller effect. This is a phenomenon in which the gate trigger voltage acts as a capacitor and is able to store up a certain amount of charge when a voltage is applied to the gate and drain terminal. This charge is then able to control the current that passes through the transistor, allowing it to act as either a switch or a voltage regulator. The presence of the insulated gate allows for a higher level of accuracy when it comes to controlling the current flow through the transistor.

In addition to its fast switching speed and low gate charge, the IRG4BC15UD-SPBF has a low thermal resistance and positive temperature coefficient. This makes it a good choice for applications that require low-noise operation and power losses. The device also offers protection from external voltages and currents, making it suitable for use in high voltage and current applications.

The IRG4BC15UD-SPBF is a single transistor IGBT, making it a suitable choice for applications such as motor control, computer uninterruptable power supplies, LED drivers and other applications in the renewable energy sector. Its fast switching speed and low gate charge make it suitable for applications where power losses need to be minimized. In addition, the protective features of the transistor make it well suited for use in high voltage and current applications.

The specific data is subject to PDF, and the above content is for reference

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