IRG4BC30FD1

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The IRG4BC30FD1 is a 600V, 30A NPT IGBT, which is part of the Insulated Gate Bipolar Transistor (IGBT) family. It is designed for low- and medium-power switching applications in industrial, transportation, LED lighting and medical systems. The device features short circuit protection, over-temperature protection, under-voltage lockout (UVLO) and fast-switching performance with low on-state losses.

IGBTs have numerous advantages over classical power transistors (BJTs). The gate-controlled bipolar switches of IGBTs combine the fast switching of MOSFETs and the high current carrying capacity of BJTs. They also offer better performance in terms of output impedance, switching speed and thermal management. In addition, they have a low on-state voltage drop, which helps to reduce power losses.

The IRG4BC30FD1 is a unique N-Channel IGBT that has been specifically designed to reduce on-state losses. The device is optimised for high-frequency switching operations with low switching losses. The chip features an advanced avalanche technology which allows for low-voltage operation and high speed switching. The design is suitable for use in many applications such as power supplies, motor control, uninterruptible power supplies, solar inverters and battery chargers.

The IRG4BC30FD1 is a conventional four-layer IGBT with a low forward voltage drop (VCE(sat)) and low gate charge (QG). The device has an excellent avalanche energy-handling capability and a low junction-to-case thermal impedance. The active area of the device boasts low thermal impedance and fast switching times. By utilising a special trench structure and optimised emitter-base structure, the device can dissipate high power while keeping the maximum junction temperature under control.

Its IGBT structure allows it to switch between the on-state, the off-state, and the linear region (in-between the on and off states). When the gate voltage exceeds the threshold voltage of the device, the MOS gate capacitor stores the charges, which open the conducting channel between the Emitter (E) and Collector (C). This is the on-state of the IGBT. When the voltage applied to the gate is below the threshold voltage, the conducting channel is turned off, and the device is in its off-state. The linear region with reduced conduction is very useful for low-power switching applications.

The IRG4BC30FD1 can support a peak reverse blocking current of 300A with a forward blocking voltage of 600V. It has an improved breakdown voltage of 700V, which is the maximum voltage that it can support when switching. Its forward current rating is 30A, which allows the device to handle moderate switching loads. The reverse recovery time of the device is 140 ns, and its on-state voltage drop is 2.15V at a 25A collector current.

The IRG4BC30FD1 is a powerful unit and is widely used in various applications such as motor control, power conversion, lighting control, lighting dimming, and many more. It is suitable for use in harsh environments since it is capable of withstanding high temperature and humid conditions. It is designed for industrial, transportation, LED lighting, medical and consumer applications. Additionally, the device is RoHS compliant.

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