IRG4BC20KD-SPBF Allicdata Electronics
Allicdata Part #:

IRG4BC20KD-SPBF-ND

Manufacturer Part#:

IRG4BC20KD-SPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 16A 60W D2PAK
More Detail: IGBT 600V 16A 60W Surface Mount D2PAK
DataSheet: IRG4BC20KD-SPBF datasheetIRG4BC20KD-SPBF Datasheet/PDF
Quantity: 451
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 451Can Ship Immediately
Specifications
Switching Energy: 340µJ (on), 300µJ (off)
Base Part Number: IRG4BC20KD-SPBF
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 37ns
Test Condition: 480V, 9A, 50 Ohm, 15V
Td (on/off) @ 25°C: 54ns/180ns
Gate Charge: 34nC
Input Type: Standard
Series: --
Power - Max: 60W
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Current - Collector Pulsed (Icm): 32A
Current - Collector (Ic) (Max): 16A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IRG4BC20KD-SPBF is a single IGBT transistor that provides high performance and power efficiency in a wide range of applications. It features a high speed switching capability and is designed for low on-state losses and low gate charge. This makes it suitable for use in a variety of power switching applications, such as motor control, DC/DC conversion, and UPS systems. The IRG4BC20KD-SPBF is available in a standard package with RoHS compliance and is suitable for use in industrial, automotive, and consumer electronics applications.

The working principle of the IRG4BC20KD-SPBF is based on the principle of the insulated gate bipolar transistor (IGBT). This transistor is composed of a metal oxide semiconductor field effect transistor (MOSFET) and a bipolar junction transistor (BJT) integrated into the same die. When a positive voltage is applied to the gate, the MOSFET is turned on and the BJT is turned on simultaneously. This causes a current flow from the drain to the source. The current flow through the transistor is proportional to the gate voltage, which makes the IRG4BC20KD-SPBF well-suited for controlling the power in various applications.

The IRG4BC20KD-SPBF can be used in a variety of applications such as motor control, DC/DC conversion, and UPS systems. It has a wide voltage and current operating range that makes it suitable for use in many different power switching applications. Its high speed switching capability allows for fast response times and improved power efficiency. Its low on-state losses, low gate charge and low R DS(on) make it a suitable choice for applications where high power efficiency is required. The IRG4BC20KD-SPBF can also be used in automotive applications such as ignition, lighting, and battery management. Additionally, it can be used in industrial and consumer electronics applications, such as home and industrial automation, renewable energy systems, and power supplies.

The IRG4BC20KD-SPBF transistors is a high performance, high power, and low power dissipation device that is suitable for a wide range of applications. Its features makes it suitable for use in motor control, DC/DC conversion, and UPS systems, as well as automotive, industrial, and consumer electronics applications. Its low on-state losses, low gate charge, and low R DS(on) value make it an optimal choice for applications requiring high power efficiency. This device also has a wide voltage and current range, allowing for flexible operation in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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