IRG4BC20UDSTRLP Allicdata Electronics
Allicdata Part #:

IRG4BC20UDSTRLP-ND

Manufacturer Part#:

IRG4BC20UDSTRLP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 13A 60W D2PAK
More Detail: IGBT 600V 13A 60W Surface Mount D2PAK
DataSheet: IRG4BC20UDSTRLP datasheetIRG4BC20UDSTRLP Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 60W
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 37ns
Test Condition: 480V, 6.5A, 50 Ohm, 15V
Td (on/off) @ 25°C: 39ns/93ns
Gate Charge: 27nC
Input Type: Standard
Switching Energy: 160µJ (on), 130µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Current - Collector Pulsed (Icm): 52A
Current - Collector (Ic) (Max): 13A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The IRG4BC20UDSTRLP is an insulated-gate bipolar transistor (IGBT), part of a series of IGBTs with an optimally designed thermally-efficient package. It is a single device that combines the advanced features of both bipolar and field effect transistors, making it suitable for numerous applications in motor drive and control, uninterruptible power supply, home appliances, and light industrial machinery.

The IRG4BC20UDSTRLP consists of two NPN transistors and one PNP transistor in a single package, with three separate circuits within the device. The first circuit consists of two laterally-connected NPN transistors whose bases are connected to each other, forming an H-bridge. The second circuit consists of an additional PNP transistor whose base is connected to the bases of the NPN transistors. The third circuit consists of a junction gate field-effect transistor (JFET) which is connected between the collector of the PNP transistor and the bases of the NPN transistors.

The three circuits operate in tandem with one another to provide the device with insulated-gate bipolar technology (IGBT), which allows the device to operate at higher voltages and faster switching speeds while simultaneously having a lower gate-charge. This is achieved by the JFET providing a voltage- independent switching action and the NPN and PNP transistors providing current conduction and high voltage blocking respectively.

When used to control motor speed, the IRG4BC20UDSTRLP acts as an efficient switch, allowing higher speed and more precise control compared to traditional mechanical switches. When used in an uninterruptible power supply (UPS) system, the device can be used to regulate the mains voltage input to the UPS system, or provide a fail-safe supply of power in the event of a mains power failure. It can also be used in home appliances and light industrial machinery for similar applications.

In summary, the IRG4BC20UDSTRLP is an insulated-gate bipolar transistor (IGBT) device with an optimally designed package for thermally-efficient operation. The device combines the advanced features of both bipolar and field effect transistors, and can be used in a variety of applications like motor drives and controls, uninterruptible power supplies, home appliances and light industrial machinery. The device provides efficient switching with high voltage blocking and current conduction, making it a reliable and cost-effective choice.

The specific data is subject to PDF, and the above content is for reference

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