IRG4BC30K-S Allicdata Electronics
Allicdata Part #:

IRG4BC30K-S-ND

Manufacturer Part#:

IRG4BC30K-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 28A 100W D2PAK
More Detail: IGBT 600V 28A 100W Surface Mount D2PAK
DataSheet: IRG4BC30K-S datasheetIRG4BC30K-S Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 28A
Current - Collector Pulsed (Icm): 58A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Power - Max: 100W
Switching Energy: 360µJ (on), 510µJ (off)
Input Type: Standard
Gate Charge: 67nC
Td (on/off) @ 25°C: 26ns/130ns
Test Condition: 480V, 16A, 23 Ohm, 15V
Description

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The IRG4BC30K-S transistor is a commonly used rectifier in power electronics applications. It belongs to a family of insulated gate bipolar transistors (IGBTs) which are made with a base of a silicon wafer that is insulated by a thin layer of oxide.

IGBTs are ideal for applications that need high voltage and current, such as motor control, welding, and SMPS. The IRG4BC30K-S is a high-power single IGBT with fast switching speed and low on-resistance to minimize switching losses. It provides an economical solution for motor drives, soft starters, inverters, and other high-power applications.

The IRG4BC30K-S features excellent thermal and electrical performance, high switching frequency and controllability, low output capacitance, and low leakage current. It is also rated for blocking voltages up to 1600V and currents up to 30A. It can withstand negative voltages and offers both over-temperature and over-current protection.

The working principle of the IRG4BC30K-S is the same as any other IGBT. It is a voltage-controlled device, meaning that the current flow is dependent on the potential difference between the gate and the emitter. When a voltage is applied to the gate, it creates a conductive channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is blocked and the IGBT is off.

In addition, the IRG4BC30K-S provides fast switching time, low on-resistance, and high avalanche energy capability. This makes it ideal for applications with high electrical and thermal performance, such as inverters, welders, motor controls, and more. The IRG4BC30K-S also offers protection features that prevent short circuits, making it an ideal choice for a variety of applications.

In conclusion, the IRG4BC30K-S is an ideal choice for applications requiring high voltage, current, and switching speed. It is rated for blocking voltages up to 1600V and currents up to 30A and offers over-temperature protection and low leakage current. The IRG4BC30K-S is also a fast switching device with low on-resistance and high avalanche energy. With its fast switching speed, high-voltage ratings, and protection features, the IRG4BC30K-S transistor is a great choice for a variety of power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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