IRG4PH40UD2-EP

IRG4PH40UD2-EP transistors are the next generation of powerful power switches designed for DC switching and rectifying applications. This Single IGBT has a 200V to 400V drain-source breakdown voltage, a maximum continuous collector current of 40A, and a very low 3.2mΩ saturation voltage. IRG4PH40UD2-EP transistors are ideal for high efficiency, fast switching and surge current applications, like uninterruptible power supplies and solar inverters.

Application

IRG4PH40UD2-EP transistors are widely used in power electronics, and are one of the most efficient and reliable switching components on the market. It can be used for applications such as motor controls, HVAC, renewable energy, electric vehicles, aerospace, and retrofit energy solutions. Other applications include: electric traction, back-up supplies, welding equipment, power supplies, AC/DC rectifiers and converters, and DC choppers.

IRG4PH40UD2-EP transistors are also well-suited for low-temperature and low-loss applications. This is because they have a very low specific on-resistance of as low as 3.2mΩ, and a low gate charge, which makes them reliable in a wide range of conditions. Additionally, they have a low reverse transfer capacity, which helps reduce EMI noise. This makes them perfect for applications with high speed switching and low heat generation.

Working Principle

IRG4PH40UD2-EP transistors are insulated gate bipolar transistors, which are power switches with a low on-state resistance and a fast switching speed. They use a gate voltage to control the flow of currents from collector to emitter, similar to a field effect transistor. When the gate is open, current is allowed to pass through, and when the gate is closed, the current is blocked.

The IRG4PH40UD2-EP Single IGBT is designed for high vibration and noise immunity and has a wide operating temperature range. This makes them ideal for operations under harsh environments. Additionally, they are designed for ruggedness, low power dissipation and long-term reliability. These transistors can sustain a maximum current of 40A and a drain-source breakdown voltage of 200V to 400V.