IRG4PH20KDPBF Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRG4PH20KDPBF is a 1200V, 200A, NPT IGBT that belongs to the Transistors - IGBTs - Single categorization. NPT IGBT stands for Planar N-channel IGBT (Insulated Gate Bipolar Transistor). This type of transistor provides low-cost and low-loss bridge-packaged solutions for applications with high commutation performance.

Their main benefit is that they can withstand high electrical stress and have low power losses as compared to other transistors. This makes them ideal for applications like Uninterruptible Power Supplies (UPS), welding inverters, datacom isolation and medical imaging.

The IRG4PH20KDPBF is a three-terminal device with a drain, gate and collector terminals. A voltage applied between the gate and the collector will turn the IGBT on, DC (direct current) will conduct through it and power the device. The IGBT can be turned off by either applying a voltage to the gate terminal or by short circuiting the drain terminal.

The applications for the IRG4PH20KDPBF IGBT include UPS, Traction and Electric Vehicle, Automated Guided Vehicle, Switching Regulator and Induction Heating. It can be used in circuits that require high power ratings and also in switching systems that need high-speed response. Additionally, the high frequency performance of this device makes it suitable for applications in AC-DC and DC-AC converters.

The working principle of the IRG4PH20KDPBF IGBT is fairly simple. The transistor begins with a positive voltage applied to the Gate terminal which creates an electric field and induces electrons to move toward the collector terminal. As a result, current starts flowing through the IGBT and the device is turned on. This phenomenon is known as the "on-state" operation of the IGBT.

When the voltage to the gate terminal is removed, the field opposite to the induced electric field will be generated, creating a hole or void in the semiconductor. This void in the semiconductor is called Depletion layer and the transistor is now in the "off-state".

The IRG4PH20KDPBF IGBT has a high breakdown voltage of 1200V and a peak output current of 200A. This makes it suitable for applications that require high peak currents or high voltage switching. Additionally, the IGBT offers low total and conduction losses making it suitable for applications requiring high efficiency. The fast turn-off speed and low switching losses are also superior and make it more suitable for applications in switch mode power supplies, motor control and solar generators.

Overall, the IRG4PH20KDPBF IGBT offers low cost and low-loss bridge-packaged solutions to applications with high commutation performance. Its high voltage, current and on/off speed performance, makes it suitable for numerous applications such as UPS, Traction and Electric Vehicle, Automated Guided Vehicle, Switching Regulator and Induction Heating.

The specific data is subject to PDF, and the above content is for reference