IRG4BC20K-S

Power - Max:	60W
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	480V, 9A, 50 Ohm, 15V
Td (on/off) @ 25°C:	28ns/150ns
Gate Charge:	34nC
Input Type:	Standard
Switching Energy:	150µJ (on), 250µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 9A
Current - Collector Pulsed (Icm):	32A
Current - Collector (Ic) (Max):	16A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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IRG4BC20K-S is an IGBT module from Infineon Technologies Corporation, it is an industrial-grade insulated gate bipolar transistor (IGBT) modules for high-power applications. This module consists of two ultra-low loss 650V IGBTs,a free wheeling diode, short-circuit protection, over-temperature and under-voltage protection devices in a power package.

Introduction

The IRG4BC20K-S IGBT features ultra-low losses, high efficiency and reliability, making it suitable for a wide range of industrial applications. In addition, this IGBT has a number of features that make it ideal for a range of applications, including high-power applications with large current demands.

Application field and working principle

The IRG4BC20K-S IGBT is commonly used in industrial applications such as motor control, power conversion, motor drive and AC motor control. This IGBT is designed to provide high thermal performance, high current handling capability, and low gate drive requirements. As an IGBT, the IRG4BC20K-S works on the principle of voltage control. It works by passing a current through a metal oxide semiconductor field effect transistor (MOSFET) gate. When the gate is exposed to a potential increase, the MOSFET conducts and a current passes through the gate. This current then flows through the device and conducts an electric charge to the gate. That charge, in turn, is conducted to the adjacent junction and directed to a desired location in the circuit.The IRG4BC20K-S also offers other benefits such as low power consumption, high-switching frequency, and high junction temperature rating. Moreover, the module is designed to reduce electromagnetic interference (EMI) and to provide maximum power conversion efficiency. In addition, the module uses internal snubbers which improve the circuit\'s balance during switching events.

Features

The IRG4BC20K-S IGBT features an advanced short circuit protection, high switching frequency, and soft switching system which helps to reduce losses. This IGBT module also features reverse current protection, segmented current limitation and auto-restart capabilities. In addition, it features a fully integrated EMC filter to reduce interference.

Conclusion

The IRG4BC20K-S IGBT module is an industrial-grade insulated gate bipolar transistor (IGBT) module designed for high-power applications. It features an advanced short circuit protection, high switching frequency and low losses. This module is commonly used in motor control, power conversion, motor drive, and AC motor control applications. In addition, it offers a number of other beneficial features such as reverse current protection, segmented current limitation, and internal snubbers, as well as a fully integrated EMC filter to reduce interference.

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