IRG4BC30W-S

Power - Max:	100W
Base Part Number:	IRG4BC30W-S
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	480V, 12A, 23 Ohm, 15V
Td (on/off) @ 25°C:	25ns/99ns
Gate Charge:	51nC
Input Type:	Standard
Switching Energy:	130µJ (on), 130µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 12A
Current - Collector Pulsed (Icm):	92A
Current - Collector (Ic) (Max):	23A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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IRG4BC30W-S Application Field and Working Principle

Transistors are electronic components that are widely used to switch electronic signals and power. They come in various types and sizes, and the IRG4BC30W-S is a popular single IGBT (Insulated Gate Bipolar Transistor). This component is used in many applications, such as motor control, renewable energy products, power conversion, industrial automation, and robotics. Let\'s look at its application field and working principle.

Application Field

The IRG4BC30W-S is a 600V high-speed IGBT device. This component is suitable for use in induction heating, solar inverters, and fans in industrial automation, as well as other applications that require high-speed switching. Its ultra-low on-state resistance and the low gate charge characteristics make this component highly suitable for a wide range of applications. This component is capable of a maximum operating temperature of 150°C and a short-circuit withstand time of up to 4.5 µs.

Working Principle

The IRG4BC30W-S is a single IGBT component. It is capable of switching either voltages or currents by using a gate signal in order to create a controlled electrical path. IGBTs incorporate the bipolar transistor and thyristor technologies into one package. This type of transistor has two modes of operation, the on-state and the off-state. In the on-state, both the base and collector electrodes are forward biased. This allows the current to flow and creates a low on-state voltage drop. The off-state is achieved when the gate is switched off and no current flows. In the IRG4BC30W-S, the IGBT has a built-in anti-parallel diode that allows current to flow in the reverse direction. This diode helps to protect circuitry against power surges and other transient events.

Conclusion

The IRG4BC30W-S IGBT is a single component capable of switching high-speed voltages and currents. This component is ideal for use in a wide variety of applications, such as induction heating, solar inverters, and industrial automation. Its ultra-low on-state resistance makes it highly efficient, and its built-in anti-parallel diode provides additional protection against power surges and other transient events.

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