IRG4BC40W-LPBF Allicdata Electronics
Allicdata Part #:

IRG4BC40W-LPBF-ND

Manufacturer Part#:

IRG4BC40W-LPBF

Price: $ 2.53
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 40A 160W TO262
More Detail: IGBT 600V 40A 160W Through Hole TO-262
DataSheet: IRG4BC40W-LPBF datasheetIRG4BC40W-LPBF Datasheet/PDF
Quantity: 18
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 2.53000
10 +: $ 2.45410
100 +: $ 2.40350
1000 +: $ 2.35290
10000 +: $ 2.27700
Stock 18Can Ship Immediately
$ 2.53
Specifications
Power - Max: 160W
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C: 27ns/100ns
Gate Charge: 98nC
Input Type: Standard
Switching Energy: 110µJ (on), 230µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Current - Collector Pulsed (Icm): 160A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IRG4BC40W-LPBF is a high-performance, insulated gate, bipolar transistor (IGBT) module. It’s packaged in an insulated metal case and has dual non-isolated and isolated terminal blocks. The device offers excellent low-speed switching capabilities and high-frequency operation and has a high blocking voltage (VDC) rating of 600V and a peak collector current (IC) rating of 40A.

The IRG4BC40W-LPBF is well-suited for applications such as: power conversion, Uninterruptible Power Supplies (UPS), switch-mode power supplies (SMPS), renewable energy, inverter drives and industrial motor control purposes. The IGBT is available in both a single and a dual configuration, and is capable of operating up to a frequency of 100kHz.

The IRG4BC40W-LPBF also provides a high degree of on-state current density and an excellent response time to current transients. The IGBT features short turn-on and turn-off switch times, providing better end-product performance. The device also includes a fast-recovery diode to improve its reliability and help extend its life span.

In terms of working principle, the IGBT works by applying voltage to the gate terminal of the IGBT. This creates an electric field across the ‘base-emitter’ junction of the power transistor, thus allowing current to flow from the collector to the emitter more easily. When the gate voltage is removed, the electric field (and therefore the current) is cut off and the transistor returns to its non-conducting state.

The IRG4BC40W-LPBF IGBT also offers additional features including an undervoltage lockout (UVLO) feature which prevents the IGBT from being turned on when the input voltage is too low, and an overvoltage protection circuit which helps protect the device from voltage surges. Additionally, the IGBT comes with a gate-emitter short-circuit protection, helping to extend its life span.

Furthermore, the IGBT includes integrated gate protection structures to minimize high frequency EMI radiation and is equipped with two built-in temperature sensor diodes which help monitor the device’s operating temperature.

Overall, the IRG4BC40W-LPBF is a powerful and reliable IGBT module which is suitable for a variety of applications. It offers excellent switching performance and features added protection features to help extend its life span.

The specific data is subject to PDF, and the above content is for reference

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