IRG4BH20K-S Allicdata Electronics
Allicdata Part #:

IRG4BH20K-S-ND

Manufacturer Part#:

IRG4BH20K-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 11A 60W D2PAK
More Detail: IGBT 1200V 11A 60W Surface Mount D2PAK
DataSheet: IRG4BH20K-S datasheetIRG4BH20K-S Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 11A
Current - Collector Pulsed (Icm): 22A
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Power - Max: 60W
Switching Energy: 450µJ (on), 440µJ (off)
Input Type: Standard
Gate Charge: 28nC
Td (on/off) @ 25°C: 23ns/93ns
Test Condition: 960V, 5A, 50 Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Description

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IGBT(Insulated Gate Bipolar Transistor) is a type of semiconductor different from MOSFET. It is a combination of a bipolar junction transistor(BJT) and a MOSFET(Thyristor). An IRG4BH20K-S is one of the most important IGBT switch packages, and is suitable for a wide range of applications such as motor drives, solar and wind power converters, induction heating, uninterruptible power supply, switch mode power supplies and power factor correction.

IRG4BH20K-S is an ultra-fast IGBT module with excellent softness features. It features two SO-28 package with a 600V/20A rating, a 400V/18A rating with a switching frequency of 300KHz and a 600V/13A rating. In terms of switching losses, the IRG4BH20K-S module has the best performance among all similar IGBTs in its class with a very low on-state voltage.

The IRG4BH20K-S has a wide operating range, which makes it suitable for a variety of applications. This module has many advantages, such as low forward voltage drop, low switching time, low on-state conduction character, low parasitic capacitance and negligible dv/dt noise.

The working principle of the IRG4BH20K-S module is based on the same principle as other IGBTs. An electric current flows from the collector to the emitter side when the MOSFET is switched “on”. When the gate current is turned “off”, the current flow is reversed and the bipolar transistor is turned “off”. The gate voltage is controlled to keep the device in the “off” state and the current flow is blocked.

The IRG4BH20K-S module is widely used in industrial, medical and automotive applications. It is a high-performance, medium-voltage IGBT module created by the company Mitsubishi Electric. This module can be used in various applications such as AC motor drives, DC motor drives, UPS systems, power factor correction, solar energy converters, and lighting systems.

In summary, the IRG4BH20K-S is an excellent choice for a wide range of applications. It has a high-performance, low switching loss and good softness that make it a preferred choice for many industrial and consumer applications. Moreover, the module is very reliable and can be used for a long time without any issues.

The specific data is subject to PDF, and the above content is for reference

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